Tunable crystallographic grain orientation and Raman fingerprints of polycrystalline SnO thin films

Liu, Quan; Liang, Lingyan; Cao, Hongtao; Luo, Hao; Zhang, Hongliang; Li, Jun; Li, Xiuxia; Deng, Fuling

doi:10.1039/c4tc02184c

Cited by 31 publications

(34 citation statements)

References 30 publications

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“…Raman spectroscopy is a powerful tool used for characterizing SnO as it can clearly distinguish various oxidation states of Sn. Raman scattering in SnO can even be used as a fingerprint to predict the crystallographic orientation in SnO thin films [40]. Geurts et al predicted following vibrational modes for SnO [41]:…”

Section: Vibrational Frequencies Of Optical Phonons In Snomentioning

confidence: 99%

“…However, theoretical calculations predict almost three times higher vibrational frequency for B 1g mode. Latest understanding about different vibrational modes in SnO suggests that the assignment of Raman shift at 113 cm -1 to B 1g mode is not preciseand this fits more to low frequency E g vibrational mode[32,40,42].Most of the SnO thin film deposition work reported in literature hasbeen performed using physical vapor deposition (PVD) techniques like sputtering [43-47], pulsed laser deposition (PLD)[8,48-50], and evaporation techniques[20,51,52]. As SnO is nota thermodynamically stable material, most of the PVDgrowth methods have a very narrowprocess window to get phase pure SnO thin films, particularly if the target material is metallic Sn.…”

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confidence: 99%

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P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

et al. 2016

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Tin monoxide (SnO) is considered as one of the most important p-type oxidesavailable to date. Thin films ofSnO have been reported to possess bothan indirect bandgap (~0.7 eV)anda direct bandgap (~2.8 eV) withquite highhole mobility (~7 cm 2 /Vs) values. Moreover, thehole density in these films can be tuned from 10 15-10 19 cm-3 just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p-n hetero-structure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices.

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Section: Vibrational Frequencies Of Optical Phonons In Snomentioning

confidence: 99%

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confidence: 99%

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

et al. 2016

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“…Raman spectroscopy is utilized to further validate the composition of the 2D SnO/In 2 O 3 heterostructures synthesized on a SiO 2 /Si substrate ( Figure a). The Raman peaks at ≈115 and ≈211 cm −1 can be assigned to the E g and A 1g Raman peaks of trigonal SnO (Figure a) . On the other hand, the low frequency Raman peak lines at ≈109 cm −1 belong to the vibrational modes of cubic In 2 O 3 , while the ones at 231 cm −1 can be ascribed to the typical E g mode of cubic In 2 O 3 (Figure a) .…”

mentioning

confidence: 94%

“…The Sn 3d XPS spectrum peak positions are illustrated in Figure c, in which the Sn 3d 3/2 peak is located at 494.48 eV and the Sn 3d 5/2 peak is located at 486.08 eV . Furthermore, the two shoulders peaks centered at 484.48 eV (Sn 0 3d 5/2 ) and 492.68 eV (Sn 0 3d 3/2 ) can be possible related to the present of fractions of elemental tin . The O 1s spectrum was fit with and deconvoluted into three distinct peaks at 529.38, 530.48, and 532.48 eV, which correspond to humps of lattice oxygen (O 2− ) from In 2 O 3 , SnO, and SiO 2 , respectively (Figure S5, Supporting Information) …”

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confidence: 99%

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

Alsaif

Kuriakose

Walia

et al. 2019

Adv Materials Inter

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COMMUNICATION (1 of 8)deployed in the form of van der Waals (vdW) heterostructures that enable fascinating coupled properties from stacked individual layers of 2D sheets which can be exploited in several applications, [2,6,7] including tunneling transistors, [8] quantum hall systems, [9] electrochemical hydrogen evolution reaction, [10] optoelectronics, [4,11] and electronics. [3,12] The p-n junctions are the building blocks of the semiconductor industry, in which the p-n junction heterostructures made from ultrathin materials are of great interest in specialized electronics, optoelectronics, and photonics due to their intriguing coupled properties of the different crystals. [5][6][7]13] Several methods for exfoliation and/or deposition exist such as chemical vapor deposition (CVD), [7] pulsed laser deposition (PLD), [14] molecular beam epitaxy (MBE), [15] pick-and-lift vdW technique, [16] and mechanical exfoliation. [17] These conventional approaches are time consuming and require complicated fabrication processes, [18] yet resulting in devices with small effective areas. [19] Liquid metals are emerging materials which can be used in microfluidics components, [20] sensors, [21] electrodes, [22] phototransistors, [23] flexible and stretchable devices, [24] disease treatment, [22] biomedical field, [22] and in synthesis of low-dimensional materials. [25] Liquid metals have been shown to form a naturally occurring atomically thin layer of oxide at their interface with air, [26][27][28][29] and using liquid metal as a reaction solvent can give access to a sizable portion of oxide elements including oxides which are intrinsically nonlayered crystals. [26] The exfoliated oxides can be converted to sulfides and phosphates. [30] Combination of these atomically thin layers should provide a vast number of vdW heterostructures that are yet to be explored.In this work, atomically thin oxide skin of low melting point liquid metals of tin and indium including p-type tin oxide (SnO) [27] and n-type indium oxide (In 2 O 3 ) [31] are stacked to produce large-area heterostructures with a high degree of homogeneity. Indeed, the p-n vdW heterojunctions feature current rectification properties with exceptionally fast photoresponse times and high sensitivity for UV light. The demonstrated liquid metal synthesis framework offers the possibility of synthesizing and exploring a range of tailored heterostructures for applications in next-generation optoelectronic and photodetection devices.

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“…There are very few reports on the vibrational properties of SnO [12,13]. Two Raman peaks at 114 and 211 cm −1 are reported for SnO [14,15]. However, controversy remains in the assignment of the peaks both in theoretical calculations and experimental reports [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Unique identification of phonon modes using polarized Raman studies of SnO(001) crystals

et al. 2019

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Stannous oxide (SnO), an exclusive p-type oxide semiconductor in the oxide family, is a source of renewed interest because of its ability to be an excellent anode material. So far, there are very few reports on the vibrational properties of SnO and controversy remains in the assignment of vibrational modes. Textured single crystals of SnO were synthesized by a one-step solvothermal method. The as-synthesized SnO crystals have a wide (001) plane, as confirmed by high resolution transmission electron microscopy images. Raman spectroscopy is used for the identification of phase as well as crystalline orientation. Moreover, a unique assignment of phonon modes in SnO is also performed using polarized Raman spectroscopic studies for different orientations around c-axis of the crystal with the incident electric field vector. Thus, a novel methodology of phonon assignment is adopted with a minimum amount of data collection for a diatomic molecule having a tetragonal symmetry with a number of symmetry elements.

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Tunable crystallographic grain orientation and Raman fingerprints of polycrystalline SnO thin films

Cited by 31 publications

References 30 publications

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

Unique identification of phonon modes using polarized Raman studies of SnO(001) crystals

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Tunable crystallographic grain orientation and Raman fingerprints of polycrystalline SnO thin films

Cited by 31 publications

References 30 publications

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

2D SnO/In2O3 van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

Unique identification of phonon modes using polarized Raman studies of SnO(001) crystals

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2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals