Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure With Concentric Circular Electrodes Controlled by Designed Substrate Bias

Yang, Chia-Hsiang; Hwu, Jenn–Gwo

doi:10.1109/ted.2017.2757506

Cited by 3 publications

(3 citation statements)

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“…Kheirabadi et al [25] considered armchair graphene nanoribbons for creating the NDR effect, which could have applications in nanoelectronics and nanosensors. Yang and Hwu [26] analyzed the tunable NDR characteristics of metal-insulator-semiconductor-insulator-metal tunnel diodes structure where the PVCR can be over 100. The NDR voltage interval exceeds 1 V. Xiong et al [27] reported a four-terminal NDR device made from a 2D BP/Al 2 O 3 /BP sandwich structure with the PVCR exceeding 100 at room temperature.…”

Section: Reviewmentioning

confidence: 99%

“…Considerable attention is paid to developing new NDR devices [21][22][23][24][25][26][27][28]30,31,33,[36][37][38][39], indicating the research topic's relevance.…”

Section: Reviewmentioning

confidence: 99%

“…In most of the published studies, there is no possibility of controlling the PVCR. The PVCR control is available in the NDR devices considered in the studies [26,27,31,39], but the maximum current levels are in the nA and µA ranges. In the NDR circuit [17], the control of PVCR is possible in the mA range by changing the value of one of the resistors.…”

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confidence: 99%

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Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

Ulansky

Raza

Milke³

2021

Applied Sciences

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Negative differential resistance (NDR) is inherent in many electronic devices, in which, over a specific voltage range, the current decreases with increasing voltage. Semiconductor structures with NDR have several unique properties that stimulate the search for technological and circuitry solutions in developing new semiconductor devices and circuits experiencing NDR features. This study considers two-terminal NDR electronic circuits based on multiple-output current mirrors, such as cascode, Wilson, and improved Wilson, combined with a field-effect transistor. The undoubted advantages of the proposed electronic circuits are the linearity of the current-voltage characteristics in the NDR region and the ability to regulate the value of negative resistance by changing the number of mirrored current sources. We derive equations for each proposed circuit to calculate the NDR region’s total current and differential resistance. We consider applications of NDR circuits for designing microwave single frequency oscillators and voltage-controlled oscillators. The problem of choosing the optimal oscillator topology is examined. We show that the designed oscillators based on NDR circuits with Wilson and improved Wilson multiple-output current mirrors have high efficiency and extremely low phase noise. For a single frequency oscillator consuming 33.9 mW, the phase noise is −154.6 dBc/Hz at a 100 kHz offset from a 1.310 GHz carrier. The resulting figure of merit is −221.6 dBc/Hz. The implemented oscillator prototype confirms the theoretical achievements.

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Section: Reviewmentioning

confidence: 99%

“…Considerable attention is paid to developing new NDR devices [21][22][23][24][25][26][27][28]30,31,33,[36][37][38][39], indicating the research topic's relevance.…”

Section: Reviewmentioning

confidence: 99%