Tunable spin and charge transport in silicene nanoribbons

Shakouri, Kh.; Simchi, Hamidreza; Esmaeilzadeh, Mahdi; Mazidabadi, Hossein; Peeters, F. M.

doi:10.1103/physrevb.92.035413

Cited by 76 publications

(44 citation statements)

References 45 publications

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“…They mentioned that silicene type group IV elements can be of potential for spintronic applications with manipulated spin currents. Moreover, tunability of spin and charge transport in SiNRs having zigzag edge shape were investigated by Shakouri et al 112 They found that the band structure of zigzag SiNR lacks spin inversion symmetry in the presence of intrinsic SOC in combination of an external electric field and an exchange field. Moreover, for certain energy ranges of the incoming electrons, SiNR was found to possess a controllable high-efficiency spin polarizing behavior.…”

Section: A Gnrs' Cousin: Silicene Nrsmentioning

confidence: 99%

Nanoribbons: From fundamentals to state-of-the-art applications

Yagmurcukardes

Peeters

Senger

et al. 2016

Applied Physics Reviews

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Atomically thin nanoribbons (NRs) have been at the forefront of materials science and nanoelectronics in recent years. State-of-the-art research on nanoscale materials has revealed that electronic, magnetic, phononic, and optical properties may differ dramatically when their one-dimensional forms are synthesized. The present article aims to review the recent advances in synthesis techniques and theoretical studies on NRs. The structure of the review is organized as follows: After a brief introduction to low dimensional materials, we review different experimental techniques for the synthesis of graphene nanoribbons (GNRs) with their advantages and disadvantages. In addition, theoretical investigations on width and edge-shape-dependent electronic and magnetic properties, functionalization effects, and quantum transport properties of GNRs are reviewed. We then devote time to the NRs of the transition metal dichalcogenides (TMDs) family. First, various synthesis techniques, E-field-tunable electronic and magnetic properties, and edge-dependent thermoelectric performance of NRs of MoS 2 and WS 2 are discussed. Then, strongly anisotropic properties, growth-dependent morphology, and the weakly width-dependent bandgap of ReS 2 NRs are summarized. Next we discuss TMDs having a T-phase morphology such as TiSe 2 and stable single layer NRs of mono-chalcogenides. Strong edge-type dependence on characteristics of GaS NRs, width-dependent Seebeck coefficient of SnSe NRs, and experimental analysis on the stability of ZnSe NRs are reviewed. We then focus on the most recently emerging NRs belonging to the class of transition metal trichalcogenides which provide ultra-high electron mobility and highly anisotropic quasi-1D properties. In addition, width-, edge-shape-, and functionalization-dependent electronic and mechanical properties of blackphosphorus, a monoatomic anisotropic material, and studies on NRs of group IV elements (silicene, germanene, and stanene) are reviewed. Observation of substrate-independent quantum well states, edge and width dependent properties, the topological phase of silicene NRs are reviewed. In addition, H 2 concentration-dependent transport properties and anisotropic dielectric function of GeNRs and electric field and strain sensitive I-V characteristics of SnNRs are reviewed. We review both experimental and theoretical studies on the NRs of group III-V compounds. While defect and N-termination dependent conductance are highlighted for boron nitride NRs, aluminum nitride NRs are of importance due to their dangling bond, electric field, and strain dependent electronic and magnetic properties. Finally, superlattice structure of NRs of GaN/AlN, Si/Ge, G/BN, and MoS 2 /WS 2 is reviewed. Published by AIP Publishing.

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Section: A Gnrs' Cousin: Silicene Nrsmentioning

confidence: 99%

Nanoribbons: From fundamentals to state-of-the-art applications

Yagmurcukardes

Peeters

Senger

et al. 2016

Applied Physics Reviews

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“…The edge states in the QSH are spin-dependent which can be used in the spin filter devices. There are a lot of such researches based on the quantum transport theories with the tight-binding (TB) model [17][18][19][20]. The external exchange magnetic field or the electric filed is often employed on these zigzag silicene-like nanoribbons (zSiNR) to regulate the spin transport properties.…”

Section: Introductionmentioning

confidence: 99%

Topological and magnetic phase transition in silicene-like zigzag nanoribbons

Xie

2018

New J. Phys.

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Spin-orbital interactions (SOI) in silicene results in the quantum-spin-Hall effect, while the Hubbard-induced Coulomb interaction in zigzag nanoribbons often generates a band gap with the anti-ferromagnetic (AF) spin orders on two edges. In this paper we systematically study these two joint contributions to the zigzag silicene-like nanoribbons (zSiNR). Some topological and magnetic phase transitions are investigated with different material parameters and external fields. We find when the ribbon width or the SOI value exceeds some critical value, the SOI may overcome the Coulomb interaction and the system transits from a band insulator to a topological insulator: the quantumspin-Hall or the spin quantum-anomalous Hall state. We also find some magnetic phase transition exists in the Hubbard-dominated zSiNR systems when the exchange field or the electric field goes beyond some critical values. Lastly we observe a double topological/magnetic phase transition in a Hubbard-SOI-balanced zSiNR system before the magnetic and topological phases are destroyed by a strong electric field. OPEN ACCESS RECEIVED

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“…The valley-dependent conductance and valley polarization are studied using tight binding non-equilibrium Green's function method (TB-NEGF). The used TB-NEGF method has been explained in our previous work in detail 25 . The valley polarization is defined as…”

Section: B K P Hamiltonian Modelmentioning

confidence: 99%

“…Zigzag silicene nanoribbon is metal 25 . When a finite length of the ribbon is sandwiched between two different magnetic insulators, silicene-based normal metal/sublattice-dependent ferromagnetic/normal metal (NM/SFM/NM) junction is formed.…”

Section: Introductionmentioning

confidence: 99%

Perfect valley polarization in MoS2

2017

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We study perfect valley polarization in a molybdenum disulfide (MoS 2 ) nanoribbon monolayer using two bands Hamiltonian model and non-equilibrium Green's function method. The device consists of a one-dimensional quantum wire of MoS 2 monolayer sandwiched between two zigzag MoS 2 nanoribbons such that the sites A and B of the honeycomb lattice are constructed by the molecular orbital of Mo atoms, only. Spin-valley coupling is seen in energy dispersion curve due to the inversion asymmetry and time-reversal symmetry. Although, the time reversal symmetry is broken by applying an external magnetic field, the valley polarization is very small. A valley polarization equal to 46% can be achieved using an exchange field of 0.13 eV. It is shown that a particular spin-valley combination with perfect valley polarization can be selected based on a given set of exchange field and gate voltage as input parameters. Therefore, the valley polarization can be detected by detecting the spin degree of freedom.

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Tunable spin and charge transport in silicene nanoribbons

Cited by 76 publications

References 45 publications

Nanoribbons: From fundamentals to state-of-the-art applications

Nanoribbons: From fundamentals to state-of-the-art applications

Topological and magnetic phase transition in silicene-like zigzag nanoribbons

Perfect valley polarization in MoS2

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