2009
DOI: 10.1103/physrevlett.102.096806
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Tunneling between Edge States in a Quantum Spin Hall System

Abstract: We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

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Cited by 103 publications
(110 citation statements)
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“…Our home-built SGM probes feature self-sensing piezoresistive deflection readout [30], which allows for precise in situ alignment of the tip to the device. The separation between the contacts in the transport direction is 5 m, and the lateral mesa width is 150 m. As this width is several orders of magnitude greater than the predicted extension of the QSH edge states into the bulk [31,32], any effect of interedge tunneling [33][34][35] can be ruled out. More relevant to our SGM experiments, the large width of the device ensures that the tip-induced potential perturbation only affects the transport along the edge located within the scan window, while the far edge remains unaffected and thus provides a constant contribution to the device conductance.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Our home-built SGM probes feature self-sensing piezoresistive deflection readout [30], which allows for precise in situ alignment of the tip to the device. The separation between the contacts in the transport direction is 5 m, and the lateral mesa width is 150 m. As this width is several orders of magnitude greater than the predicted extension of the QSH edge states into the bulk [31,32], any effect of interedge tunneling [33][34][35] can be ruled out. More relevant to our SGM experiments, the large width of the device ensures that the tip-induced potential perturbation only affects the transport along the edge located within the scan window, while the far edge remains unaffected and thus provides a constant contribution to the device conductance.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…It is therefore more convenient to treat the Hamiltonian of the HLL as an effectively spinless LL by introducing the fields Φ = (φ R↑ + φ L↓ )/ √ 2 and Θ = (φ L↓ − φ R↑ )/ √ 2. When including the interactions, the bosonized form of the Hamiltonian of the interacting HLL becomes [30][31][32]70,97,98 …”
Section: B Helical Luttinger Liquidmentioning
confidence: 99%
“…[14][15][16] So there has been a great deal of interest in the edge-state transport. [17][18][19] Consequently, the manipulation of transport for edge states by using a local electric field 20 is crucial for fundamental understanding of TI edge states and constructing dissipationless spintronic devices. In this letter, we address this important issue by studying the electronic band, density distribution, and transport for a HgTe/CdTe quantum well hall bar (strip) 13 with finite width under an electric field along the transverse y direction.…”
mentioning
confidence: 99%