2012
DOI: 10.1103/physrevb.85.195138
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Tunneling between helical edge states through extended contacts

Abstract: We consider a quantum spin Hall system in a two-terminal setup, with an extended tunneling contact connecting upper and lower edges. We analyze the effects of this geometry on the backscattering current as a function of voltage, temperature, and strength of the electron interactions. We find that this configuration may be useful to confirm the helical nature of the edge states and to extract their propagation velocity. By comparing with the usual quantum point contact geometry, we observe that the power-law be… Show more

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Cited by 59 publications
(66 citation statements)
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References 47 publications
(84 reference statements)
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“…The probe is subject to a bias voltage V measured with respect to the Fermi level of the system. We assume a local tunneling at x 0 which breaks inversion parity, focusing, e.g., on the injection in the system R−channel only [49,[60][61][62],…”
Section: Transient Dynamics Of Transport Propertiesmentioning
confidence: 99%
“…The probe is subject to a bias voltage V measured with respect to the Fermi level of the system. We assume a local tunneling at x 0 which breaks inversion parity, focusing, e.g., on the injection in the system R−channel only [49,[60][61][62],…”
Section: Transient Dynamics Of Transport Propertiesmentioning
confidence: 99%
“…The tunneling region is characterized by the envelope function w(y), whose precise shape will be specified later [65][66][67].…”
Section: Setup and General Modelmentioning
confidence: 99%
“…We retain only contributions from transversal tunneling, for they are proven to be largely dominant. 44 In addition, we consider external potentials V T and V B that couple to the two edgeŝ…”
Section: Modelmentioning
confidence: 99%