Applied Surface Science
 2024
DOI: 10.1016/j.apsusc.2024.160885
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Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

Antonino Scandurra,
Paolo Ragonese,
Cristiano Calabretta
et al.
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