Two-dimensional halide perovskite lateral epitaxial heterostructures

Shi, Enzheng; Yuan, Biao; Shiring, Stephen B.; Gao, Yao; Akriti,; Guo, Yilin; Su, Cong; Lai, Minliang; Yang, Peidong; Kong, Jing; Savoie, Brett M.; Yu, Yi; Dou, Letian

doi:10.1038/s41586-020-2219-7

Cited by 358 publications

(411 citation statements)

References 54 publications

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“…The TFT characteristics are strongly influenced by the PEAI content, as shown in Figure 1c. The mobility increased by a factor of 20 from 0.03 cm 2 V −1 s −1 at PEAI:SnI 2 mole ratio = 1.6 to 0.67 cm 2 V −1 s −1 at the ratio = 2.4, with notably enhanced on/off ratio (≈10 5 ) and reduced dual-sweep hysteresis. The typical TFT parameters are listed in Table S1, Supporting Information.…”

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confidence: 96%

“…The recent development in the field of organic-inorganic hybrid halide perovskite materials for use in solar cells and light-emitting diodes has evoked widespread interest in various applications within both the scientific and industrial communities, due to their excellent optoelectronic properties and simple scalable processability. [1][2][3][4][5] However, perovskitebased thin-film transistors (TFTs) have drawn less research attention, despite the high intrinsic charge carrier mobility. [6][7][8] This is mainly due to the difficulty in obtaining a reliable transistor operation with spin-coated perovskite films as a result of ion migration under bias, poor ambient stability of the material, and bulk and interfacial defects.…”

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confidence: 99%

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High‐Performance and Reliable Lead‐Free Layered‐Perovskite Transistors

et al. 2020

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Perovskites have been intensively investigated for their use in solar cells and light‐emitting diodes. However, research on their applications in thin‐film transistors (TFTs) has drawn less attention despite their high intrinsic charge carrier mobility. In this study, the universal approaches for high‐performance and reliable p‐channel lead‐free phenethylammonium tin iodide TFTs are reported. These include self‐passivation for grain boundary by excess phenethylammonium iodide, grain crystallization control by adduct, and iodide vacancy passivation through oxygen treatment. It is found that the grain boundary passivation can increase TFT reproducibility and reliability, and the grain size enlargement can hike the TFT performance, thus, enabling the first perovskite‐based complementary inverter demonstration with n‐channel indium gallium zinc oxide TFTs. The inverter exhibits a high gain over 30 with an excellent noise margin. This work aims to provide widely applicable and repeatable methods to make the gate more open for intensive efforts toward high‐performance printed perovskite TFTs.

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confidence: 99%

High‐Performance and Reliable Lead‐Free Layered‐Perovskite Transistors

et al. 2020

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“…Reproduced with permission. [47] Copyright 2020, Nature Research. potentials in efficient and stable LEDs, whereas type-II CsPbBr 3 -ZrO 2 can be used in the photocatalytic reduction of CO 2 because of the separation of electrons and holes under illumination.…”

Section: Perovskite-inorganic Semiconductormentioning

confidence: 99%

Perovskite Nano‐Heterojunctions: Synthesis, Structures, Properties, Challenges, and Prospects

Wang

2020

Small Structures

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Scientific and industrial interest on perovskite semiconductor materials has grown rapidly in recent years. Through the efforts of researchers professionals in chemistry, physics, materials and electronics, etc., many records based on perovskites have been and are being refreshed. The brilliant performances emerge not only from the excellent properties of perovskite themselves, but also originate from the composite material systems of hybridizing perovskites with heteromaterials. Herein, first, the crystal and nanostructures of perovskite materials, semiconductor-based heterojunctions, and the categories of perovskite heterojunction are fundamentally introduced. Then, the state-of-the-art synthesis methods, size and structure control, electron structure-related physical properties, and applications of the perovskite-based nano-heterojunctions are comprehensively reviewed. Finally, perspectives on tackling challenges and developing trends are discussed.

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“…[11] More recently, a variety of RP perovskites are obtained by fine tuning long-chain organic cations, [12] and related lateral epitaxial heterostructures with near-atomically sharp interfaces are also realized. [13] A rich engineering of 2D RP perovskites have meanwhile been demonstrated by many different routes, [12][13][14][15][16][17] however, it is not the case for non-RP perovskites in 2D or quasi-2D form. In spite of some attempts on MAPbI 3, [18][19][20][21][22] it is highly desirable to identify more perovskite phases for this purpose, and to address their cooperative interaction with other 2D materials.…”

Section: Low-dimensional Perovskites Have Gained Increasing Attentionmentioning

confidence: 99%

Engineering the Phases and Heterostructures of Ultrathin Hybrid Perovskite Nanosheets

et al. 2020

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Low‐dimensional perovskites have gained increasing attention recently, and engineering their material phases, structural patterning and interfacial properties is crucial for future perovskite‐based applications. Here a phase and heterostructure engineering on ultrathin perovskites, through the reversible cation exchange of hybrid perovskites and efficient surface functionalization of low‐dimensional materials, is demonstrated. Using PbI2 as precursor and template, perovskite nanosheets of varying thickness and hexagonal shape on diverse substrates is obtained. Multiple phases, such as PbI2, MAPbI3 and FAPbI3, can be flexibly designed and transformed as a single nanosheet. A perovskite nanosheet can be patterned using masks made of 2D materials, fabricating lateral heterostructures of perovskite and PbI2. Perovskite‐based vertical heterostructures show strong interfacial coupling with 2D materials. As a demonstration, monolayer MoS2/MAPbI3 stacks give a type‐II heterojunction. The ability to combine the optically efficient perovskites with versatile 2D materials creates possibilities for new designs and functionalities.

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Two-dimensional halide perovskite lateral epitaxial heterostructures

Cited by 358 publications

References 54 publications

High‐Performance and Reliable Lead‐Free Layered‐Perovskite Transistors

High‐Performance and Reliable Lead‐Free Layered‐Perovskite Transistors

Perovskite Nano‐Heterojunctions: Synthesis, Structures, Properties, Challenges, and Prospects

Engineering the Phases and Heterostructures of Ultrathin Hybrid Perovskite Nanosheets

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