Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors

Sharma, Satinder K.; Das, Subhashis; Khosla, Robin; Shrimali, Hitesh

doi:10.1109/ted.2022.3202510

Cited by 8 publications

(4 citation statements)

References 45 publications

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“…In recent years, there has been a significant increase in interest in dye-sensitized solar cells (DSSCs) as viable and economically viable alternatives to silicon-based and thin film solar cells. The physicochemical features of two-dimensional (2D) graphene-like transition metal dichalcogenides (TMDs), such as WS 2 and MoS 2 , have demonstrated significant promise as innovative energy materials [238]. The exploration of advanced manufacturing techniques for the production of functional materials and the provision of products with enhanced performance and functionality has consistently posed difficulties in terms of energy productivity, cost-efficiency, and environmental sustainability.…”

Section: Molybdenum Sulfide-based Electrodesmentioning

confidence: 99%

“…This is because a technique that is successful in the laboratory does not simply translate to manufacturing on a large scale. When it comes to real use, it is desirable to have stability and endurance under actual operational conditions, such as charge/discharge cycles, temperature variations, and mechanical vibrations [238]. The extent to which these high-performance materials are cost-effective is something that must be taken into consideration if there is any hope that they may be utilized extensively.…”

Section: Supercapacitor Mss: Addressing Scientific Challenges and Pro...mentioning

confidence: 99%

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Recent advancements in supercapacitors and their charge storage mechanism and progress in transition metal sulfide-based electrodes

Khan,

Shariq,

Bouzgarrou

et al. 2024

Phys. Scr.

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Efficient energy storage strategies have become a major priority in the last few years. Transition metal sulphides are popularly known as attractive electrode materials or supercapacitors due to their high theoretical capacitance, excellent electrical conductivity, and favourable redox properties. Through compositional and structural engineering, some transition metal sulphides like Mn, V, Co, Fe, Cu, Ni, Mo, Zn, W, and Sn have shown substantial improvements in electrochemical performance. Composite engineering and morphological control are two of the key strategies employed to improve the TMS electrode’s electrochemical performance. Excellent electrochemical TMSs address the issues of slow kinetics, poor stability, and large volume expansions. This study reveal optimised TMSs potential to transform supercapacitor applications and provides viable approaches to conquer current hurdles to shape the forthcoming century’s high-performance and low-cost energy storage technology. The effects of composite engineering and morphological control on the ultimate electrochemical performance of the electrode materials are the primary focus of this investigation. Challenges to the further advancement of transition metal sulphide-based electrode materials are also explored in this article. Critical approaches to resolving significant issues in our current understanding of the kinetic and mechanistic perspectives of charge storage processes, i.e., slow kinetics, poor stability, and volume expansions, are also highlighted. Ultimately, future potentials, challenges, and possible solutions to tackle these problems are broadly discussed.

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Section: Molybdenum Sulfide-based Electrodesmentioning

confidence: 99%

Section: Supercapacitor Mss: Addressing Scientific Challenges and Pro...mentioning

confidence: 99%

Recent advancements in supercapacitors and their charge storage mechanism and progress in transition metal sulfide-based electrodes

Khan,

Shariq,

Bouzgarrou

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…[29][30][31][32] To enhance current channel materials, approaches include device modifications like vertical structures and improved gate/dielectric stacks. [33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48] Nonetheless, the pursuit of new 2D semiconductors with optimal band gaps, higher mobility, and improved air stability remains essential. [49][50][51][52] Tetrahex-GeC 2 , a novel 2D germanium carbide, displays remarkable electronic and carrier transport properties.…”

Section: Introductionmentioning

confidence: 99%

“…29–32 To enhance current channel materials, approaches include device modifications like vertical structures and improved gate/dielectric stacks. 33–48 Nonetheless, the pursuit of new 2D semiconductors with optimal band gaps, higher mobility, and improved air stability remains essential. 49–52…”

Section: Introductionmentioning

confidence: 99%

Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC₂ n-type MOSFETs

Xu,

Li,

Sun

et al. 2024

Phys. Chem. Chem. Phys.

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Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Wang,

Chen,

Yun

et al. 2025

Adv Funct Materials

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Ferroelectrics are considered to be promising candidates for highly energy‐efficient electronic devices in future information technologies owing to their nonvolatile and low‐energy operation of spontaneous electric polarization. Driven by the pervasive and growing demands for miniaturization and energy efficiency in nanoelectronics, further reductions in the operating voltage of ferroelectric‐based devices are dispensable and thus have received immense attentions. Recent remarkable advances in atomic‐scale synthesis, cutting‐edge characterizations, and multiscale theoretical calculations of ferroelectrics have gained unprecedented insights into the manipulation of emergent functionalities in multiple length scales, which helps the discovery of nontrivial polar structures and designs of device architectures toward the promise of ultralow‐power consumption. Here, state‐of‐the‐art strategies for reducing operating voltage in ferroelectric materials and devices are reviewed. This article starts with a brief introduction and major achievements in ferroelectrics, and expounds on the techniques to probe the polarization‐switching process. Moreover, this article focuses predominantly on recent advancements in achieving low operating voltages through various prevalent strategies such as thickness scaling, defect engineering, chemical doping, surface and interfacial design, strain engineering. Finally, perspectives with scientific and technical challenges are discussed, aiming to facilitate the energy‐efficient applications of ferroelectric materials and devices in future information technologies.

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Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors

Cited by 8 publications

References 45 publications

Recent advancements in supercapacitors and their charge storage mechanism and progress in transition metal sulfide-based electrodes

Recent advancements in supercapacitors and their charge storage mechanism and progress in transition metal sulfide-based electrodes

Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC₂ n-type MOSFETs

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

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Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors

Cited by 8 publications

References 45 publications

Recent advancements in supercapacitors and their charge storage mechanism and progress in transition metal sulfide-based electrodes

Recent advancements in supercapacitors and their charge storage mechanism and progress in transition metal sulfide-based electrodes

Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Contact Info

Product

Resources

About

Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC₂ n-type MOSFETs