Two-step effective medium theory and its application in predicting the optical properties of anodized alumina film

Atsumi, Toshiyuki; Miyagi, Mitsunobu

doi:10.1002/(sici)1520-6432(199803)81:3<23::aid-ecjb4>3.0.co;2-7

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…3.54) and also appear to originate from the effect of clustering. Atsumi and Miyagi [319] proposed a two-step EMT to predict the optical properties of anodized alumina films based on the assumption that spherical aluminum particles are distributed in columnar structures within an anodized alumina film. Using this model, theoretical parameters such as the volume ratio and distribution range of alumina particles were determined, their dependencies on the anodization conditions were evaluated, and the optical constants of the alumina films were calculated.…”

Section: Composite Porous and Discontinuous Filmsmentioning

confidence: 99%

Interpretation of IR Spectra of Ultrathin Films

2003

Handbook of Infrared Spectroscopy of Ultrathin Films

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Generally speaking, IR spectral measurements of ultrathin films are undertaken to determine (i) the chemical identity of adsorbed species (including dissociation fragments); (ii) the geometric or structural arrangement (orientation) of these species and their positions with respect to the surface atoms of the substrate; (iii) their vibrational, rotational, and translational motion on the surface; (iv) the charge distribution and energy level structure of the valence electrons in both adsorbate and substrate; and (v) the effects of external perturbations, such as the electric and magnetic fields, photons, electrons, heating, and surface pressure on factors (i)-(iv) [1]. However, such information cannot be extracted directly from the IR spectra of ultrathin films due to the strong dependence of the shape and relative intensity of the bands on the geometry of the experiment, the optical properties of the substrate, the surroundings, the gradient of the optical properties at the film-substrate interface and in the film itself, as well as on the film thickness, and the particle size in the case of powder or islandlike supports. These effects and their physical background are discussed in Sections 3.1-3.5 and 3.9. In addition, there can be an intensity transfer between modes of coadsorbed species and a change in the band position with surface coverage. This effect is used for determining the mode of the surface filling and the degree of intermixing of different species at the surface (Section 3.6). If the film under study is located at the electrode-solution interface, the resulting spectrum is made up of contributions of all species in the path of radiation that are affected by the electrode potential, which further complicates the interpretation. Apart from technical means (Chapter 4), there exist analytical and mathematical approaches to resolve contributions of different species in such a complex spectrum (Sections 3.7 and 3.8). Another feature of the IR spectra of ultrathin films that is perhaps surprising and unexpected is their sensitivity to the volume fraction, shape, and orientation of inhomogeneities (e.g., pores or inclusions) in the film. Moreover, if the characteristic size of the 140

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Section: Composite Porous and Discontinuous Filmsmentioning

confidence: 99%

Interpretation of IR Spectra of Ultrathin Films

2003

Handbook of Infrared Spectroscopy of Ultrathin Films

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Rapid electric field-enhanced crystallization of amorphous silicon thin films with an aluminum layer

Ryu

Park

Moon

2023

Materials Science in Semiconductor Processing

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Excimer laser-induced temperature field in melting and resolidification of silicon thin films

Hatano

Moon

Lee

et al. 2000

Journal of Applied Physics

180

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The liquid/solid interface motion and temperature history during excimer laser annealing of 50-nm-thick Si films on fused quartz substrates are investigated by in situ nanosecond time-resolved electrical conductance, optical reflectance, and transmittance at visible and near-IR wavelengths, combined with thermal emission measurements. The temperature response, melt propagation and evolution of the recrystallization process are fundamentally different in the partial-melting and the complete-melting regimes. Because it is necessary to balance the latent heat across the propagating phase-change interface, the maximum induced temperature in the partial-melting regime remains close to the melting point of amorphous Si. The peak temperature rises in the complete-melting regime, but the nonparticipating nature of the liquid Si/fused quartz interface allows substantial supercooling (>200 K), followed by spontaneous nucleation into fine-grained material. These phase transformations are consistent with the recrystallized polycrystalline Si morphologies that indicate grain enhancement in the near-complete-melting regime. It is also found that melting of polycrystalline Si occurs close to the melting point of crystalline Si. This temperature is by approximately 140 K higher than the melting point of amorphous Si.

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Two-step effective medium theory and its application in predicting the optical properties of anodized alumina film

Cited by 3 publications

References 6 publications

Interpretation of IR Spectra of Ultrathin Films

Interpretation of IR Spectra of Ultrathin Films

Rapid electric field-enhanced crystallization of amorphous silicon thin films with an aluminum layer

Excimer laser-induced temperature field in melting and resolidification of silicon thin films

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