Ultrafast Charge Carrier Recombination in a-Si:H and μc-Si:H

We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments. This work is carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility (SLHC). Tracking detectors operating at the SLHC in this environment will have to be capable of withstanding radiation levels arising from a luminosity of 10 35 cm -2 s -1 which will present severe challenges to current tracking detector technologies. The "new materials" activity within RD50 is investigating the performance of various semiconductor materials that potentially offer radiation hard alternatives to silicon devices. The main contenders in this study are silicon carbide, gallium nitride and amorphous silicon. In this paper we review the current status of these materials, in terms of material quality, commercial availability, charge transport properties, and radiation hardness studies. Whilst these materials currently show considerable promise for use as radiation hard tracking detectors, their ultimate success will depend on the continued improvement of the availability of high quality material.

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Ultrafast carrier dynamics in undoped microcrystalline silicon

Kudrna

Malý

Trojánek

et al. 2000

Materials Science and Engineering: B

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We have studied ultrafast dynamics of photoexcited carriers in mc-Si:H by pump and probe laser spectroscopy. We have found that the dynamics of photoexcited carriers in mc-Si:H depend on the crystallinity of the material: in the samples with low crystalline fraction, the dynamics have a fast decay and resemble those in a-Si:H, while in the samples with high crystallinity the dynamics are slower and similar to those in c-Si. We have identified an intensity dependent bimolecular recombination in the samples with lower crystalline fraction (coefficient B = 2× 10 − 10 cm 3 s − 1 for deposition with silane dilution ratio :5% at a fixed power of 6 W), and no bimolecular recombination in the samples with high crystallinity.

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Ultrafast Charge Carrier Recombination in a-Si:H and μc-Si:H

Cited by 9 publications

References 12 publications

Non-Langevin bimolecular recombination in low-mobility materials

Non-Langevin bimolecular recombination in low-mobility materials

New materials for radiation hard semiconductor dectectors

Ultrafast carrier dynamics in undoped microcrystalline silicon

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