IEEE Electron Device Lett.
 2022
DOI: 10.1109/led.2022.3203291
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Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion

Oguz Odabasi
1
,
Amir Ghobadi
2
,
T. Gamze Ulusoy Ghobadi
3
et al.
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