Umbrella-like CdS single crystal: exposed (002) facets and enhanced photocatalytic properties

Zhang, Jiyun; Song, Yanyan; Dong, Xian-Hui; Jiang, Haoyang; Tang, Jianguo; Li, Haidong

doi:10.1007/s10853-020-04770-9

“…[41] Raman spectra reveal the vibrational peaks at 299 and 598 cm −1 originate from the optical phonon modes of CdS (Figures S10b, S10c, Supporting Information). [42,43] The Mott-Schottky curve reflects that Pt-CdS x -T has more negative flat band position than CdS x -T, indicating the enhanced reduction ability to hydrogen protons (Figure 1g). According to the UV-vis diffuse reflectance spectra (DRS), Pt-CdS x -T exhibits a wide range of absorption, and there is no significant variation in the photoabsorption intensities of CdS x -T, CdS x -Na, CdS x -N, and CdS x -L (Figure S11, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Surface Unsaturated Sulfur Modulates Pt Sub‐Nanoparticles on Tandem Homojunction CdS for Efficient Electron Extraction

Tang

¹

,

Jia

²

,

Guo

³

et al. 2023

Advanced Energy Materials

View full text Add to dashboard Cite

The metal‐semiconductor interfacial photocarrier extraction and utilization are crucial for boosting photocatalytic activity, and the construction of interfacial chemical bonds to anchor the metal active sites is an emerging direction to facilitate interfacial photocarrier extraction. Herein, interfacial PtS bonds are designed via an in situ photoreduction to precisely anchor Pt sub‐nanoclusters (SNCs) on the tandem homojunction CdS (Pt‐CdSx‐T). The optimized Pt0.02‐CdSx‐T photocatalyst exhibits an impressive hydrogen evolution rate of 854.2 µmol h−1 with an apparent quantum yield of 43.55% at 470 nm, which is nearly 13 times that of pristine CdS. Systematic investigations reveal that the abundant coordination‐unsaturated S atoms on CdSx‐T act as sites to anchor Pt SNCs and the thus formed interfacial PtS bonds accelerate the metal‐semiconductor interface directional photocarriers transfer. The homojunction CdSx‐T with its tandem potential barrier promotes the separation of photocarriers via an internal electrostatic field, and the metal‐semiconductor interface electron transfer kinetics and H* adsorption capacity depend on the Pt SNCs size as confirmed by the surface photovoltage spectroscopy and density functional theory calculations. This work affords a new perspective for the exploitation of precisely dispersed cocatalysts on homojunction catalysts to achieve high‐efficiency photocatalytic hydrogen evolution.

show abstract

“…Navarro et al 25 reported that CdS crystals with different morphologies could be obtained using thiourea a sulphur source. Li et al 29 reported that the umbrella-like CdS with exposed high-activity (002) facets was successfully synthesized by using NH 4 SCN as the sulfur source. The unprecedented (110)-bound CdS rhombic dodecahedra were produced by using thioacetamide as the sulfur source.…”

Section: Introductionmentioning

confidence: 99%

Effect of the organic sulfur source on the photocatalytic activity of CdS

Zhu

¹

,

Wang

²

,

Chen

³

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Many strategies have been proposed to improve the visible-light photocatalytic efficiency of TiO 2 such as ion doping materials, metal loading materials, heterojunction hybrids, and sensitization. 14–18 Among them, heterojunction formation with the use of narrow bandgap semiconductors is considered to be one of the most effective methods to address the above-described limitations of TiO 2 . 19…”

Section: Introductionmentioning

confidence: 99%

“…Many strategies have been proposed to improve the visible-light photocatalytic efficiency of TiO 2 such as ion doping materials, metal loading materials, heterojunction hybrids, and sensitization. [14][15][16][17][18] Among them, heterojunction formation with the use of narrow bandgap semiconductors is considered to be one of the most effective methods to address the abovedescribed limitations of TiO 2 . 19 On other hand, graphite carbon nitride (g-C 3 N 4 ), as an n-type semiconductor, has attracted remarkable attention because of its good visible light photocatalytic performance and high photocatalytic stability with a narrow band gap of about 2.7 eV.…”

Section: Introductionmentioning

confidence: 99%