properties, [5][6][7][8][9][10][11][12] including large absorption coefficient (≈10 5 cm −1 ), low trap density, large carrier diffusion length (from 2.6 µm to 3 mm), high carrier mobility (≈100 cm 2 V −1 s −1 ), and small exciton binding energy (≈20 meV), enable a range of promising applications in optoelectronics and electronics, such as solar cells, [13][14][15][16] transistors, [17][18][19][20] lasers, [21][22][23][24] and light emitting diodes (LEDs). [25][26][27][28] Although great progress has been made for perovskite optoelectronics in the last decade, a deep understanding and control their underlying properties remain limited. For example, the absorption wavelength of common-used perovskites is limited to the UV-vis range. Developing an effective and facile strategy to tune its optical and electronic properties remains as a major challenge.Introducing ions, molecules, or nanoparticles into perovskites provides more possibilities to tune their optical, electrical, and even mechanical properties. For example, He et al. introduced Cs ions into perovskite, resulting in improved photoelectric conversion efficiency and increased stability. [29] Lin et al. synthesized perovskite/carbon nanotube composite crystal and achieved improved carrier mobilities. [30] Coupling perovskites with quantum dots (QDs) provides more interesting phenomena. For example, Sargent's group first developed a mixed perovskite film by introducing PbS QDs into cystalline film and a single crystal bulk, which showed promising light-emitting application in IR region. [31,32] Halide perovskites are widely explored as efficient photoresponsive materials for optoelectronic devices. However, understanding and controlling their underlying optical and electrical properties remains limited. Here, a novel approach is developed by introducing silver sulfide (Ag 2 S) quantum dots (QDs) into an MAPbBr 3 single crystal. The high-quality Ag 2 S-quantum-dot-inperovskite (Ag 2 S-QDiP) matrixes synthesized through a laser-assisted inverse temperature crystallization (LA-ITC) strategy show broadband light-sensitive wavelength from 550 to over 1000 nm, and a balanced carriers mobility facilitates their transmission and collection. A Ag 2 S-QDiP-enabled photodetector is demonstrated, which exhibits considerably enhanced responsivity and detectivity of 1.17 A W −1 and 6.24 × 10 14 Jones at 532 nm, and 57.69 mA W −1 and 1.03 × 10 11 Jones at 1064 nm, respectively. The enhanced performance in the near-infrared (NIR) region can be attributed to the discrete heterojunction formed between MAPbBr 3 and Ag 2 S QDs, which enhances the light absorption in the NIR range and facilitates photogenerated excitons' separation at the interface. The facile synthesis process, the more balanced transport behavior, and the ensuing improved device performance highlight introducing QDs into perovskite single crystal as an efficient strategy for tuning fundamental properties of perovskite and for developing high-efficiency broadband electronic and optoelectronic devices.