IEEE Trans. Electron Devices
 2024
DOI: 10.1109/ted.2024.3409510
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Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node—Part I: Defect-Based Statistical Compact Model

Yong Liu,
Da Wang,
Pengpeng Ren
et al.
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