Materials Science in Semiconductor Processing
 2025
DOI: 10.1016/j.mssp.2024.109027
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Understanding the pressure effect on the physical properties of half-Heusler semiconductor LiCaX (X = As, Sb, N) compounds from Ab-initio calculations

Yasemin O. Ciftci,
Belgin Kocak,
Engin Ateser
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