Universal Precise Growth of 2D Transition-Metal Dichalcogenides in Vertical Direction

Pan, Baojun; Zhang, Kenan; Ding, Chang‐Chun; Wu, Zhen; Fan, Qunchao; Luo, Tingyan; Zhang, Lijie; Zou, Chao; Huang, Shaoming

doi:10.1021/acsami.0c08335

Cited by 19 publications

(27 citation statements)

References 45 publications

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“…E f for per Fe atom unit cell of Fe x Te y clusters is defined by the formula. [ 57,58 ]

\begin{matrix} E_{normalf} = (E_{tot} - E_{{SiO}_{2}} - x μ_{Fe} - y μ_{Te}) / x \end{matrix}

where E tot is the total energy corresponding to the different slab models taken into account. E SiO2 is the total energy of the reference SiO 2 (0001).…”

Section: Methodsmentioning

confidence: 99%

Phase‐Selective Synthesis of Ultrathin FeTe Nanoplates by Controllable Fe/Te Atom Ratio in the Growth Atmosphere

Zhang

Hossain

et al. 2021

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Phase controllable synthesis of 2D materials is of significance for tuning related electrical, optical, and magnetic properties. Herein, the phase‐controllable synthesis of tetragonal and hexagonal FeTe nanoplates has been realized by a rational control of the Fe/Te ratio in a chemical vapor deposition system. Using density functional theory calculations, it has been revealed that with the change of the Fe/Te ratio, the formation energy of active clusters changes, causing the phase‐controllable synthesis of FeTe nanoplates. The thickness of the obtained FeTe nanoplates can be tuned down to the 2D limit (2.8 nm for tetragonal and 1.4 nm for hexagonal FeTe). X‐ray diffraction pattern, transmission electron microscopy, and high resolution scanning transmission electron microscope analyses exhibit the high crystallinity of the as‐grown FeTe nanoplates. The two kinds of FeTe nanoflakes show metallic behavior and good electrical conductivity, featuring 8.44 × 104 S m−1 for 9.8 nm‐thick tetragonal FeTe and 5.45 × 104 S m−1 for 7.6 nm‐thick hexagonal FeTe. The study provides an efficient and convenient route for tailoring the phases of FeTe nanoplates, which benefits to study phase‐sensitive properties, and may pave the way for the synthesis of other multiphase 2D nanosheets with controllable phases.

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“…E f for per Fe atom unit cell of Fe x Te y clusters is defined by the formula. [ 57,58 ]

\begin{matrix} E_{normalf} = (E_{tot} - E_{{SiO}_{2}} - x μ_{Fe} - y μ_{Te}) / x \end{matrix}

where E tot is the total energy corresponding to the different slab models taken into account. E SiO2 is the total energy of the reference SiO 2 (0001).…”

Section: Methodsmentioning

confidence: 99%

Phase‐Selective Synthesis of Ultrathin FeTe Nanoplates by Controllable Fe/Te Atom Ratio in the Growth Atmosphere

Zhang

Hossain

et al. 2021

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“…Although the morphology, thickness, and domain size of CVD-grown 2D transition metal sulde lms can be affected by the S amount, the experimental outputs oen suffer from a lack of reproducibility due to the poor control of S evaporation. 16 By contrast, gaseous hydrogen sulde (H 2 S) 4,44 has been discovered as an effective S source for the growth of transition metal suldes, but its high toxicity is a major issue. Jin et al 37 introduced sodium sulfate (Na 2 SO 4 ) as a sulfur precursor to effectively control the diffusion of source precursors and balance their mass ux (Fig.…”

Section: Control Of Precursor Vapor Concentrationsmentioning

confidence: 99%

Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

et al. 2021

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“…Researchers devoted much effort in this aspect. [104,137,138,[181][182][183][184][185][186] However, it is purely empirical to make the above balance and the controllability is limited.…”

Section: Grains and Morphologymentioning

confidence: 99%

Toward Wafer‐Scale Production of 2D Transition Metal Chalcogenides

Wang

Yang

2021

Adv Elect Materials

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When the timeline reached 2004, graphene, the single layer of graphite, was discovered through a scotch-tape exfoliation method and was found to have ultrahigh mobility. [25][26][27] Various 2D materials such as transition metal chalcogenides (TMCs), [28][29][30] boron nitrides (BNs), [31,32] black phosphorus, [33,34] and some new materials including Si, [35] Te, [36] and black arsenic-phosphorus [37] were subsequently synthesized, enabling the fabrication of numerous novel devices. The field of 2D materials is now making strong voice, which is no longer ignored by the scientific and technological community. [38][39][40] Among the various 2D materials, the TMCs constituted by the transition metal elements (M) and the chalcogen elements (X) are a large family. M can range from group 4B to group 10 in the periodic table, while X is S, Se, or Te. [41][42][43][44][45][46][47] Figure 1a exhibits the binary TMCs that have already been explored. This variation of composition of elements transfers to a wide range of properties ranging from insulators (e.g., HfS 2 ), [48,49] semiconductors (e.g., MoS 2 , WS 2 ), [50,51] semimetals (e.g., MoTe 2 , TiSe 2 ), [52,53] to metals (e.g., NbSe 2 , VS 2 ). [54][55][56] Furthermore, TMCs can form alloys in the formula such as WSe 2−x S x , with composition-tunable properties. [57][58][59] Unlike semimetallic graphene, semiconducting TMCs usually possess a bandgap. For example, MoS 2 exhibits a bandgap, transitioning from indirect bandgap to direct bandgap when it thins from bulk phase to monolayer (Figure 1b), boosting the photoluminescence (PL) efficiency. [51,[60][61][62] Additionally, inversion symmetry breaking and large spin-orbit interaction, resulting in two energetic degenerate but inequivalent valleys in the band structure of a TMC (Figure 1c), may lead to breakthroughs in valleytronics and spintronics. [63][64][65][66][67][68][69][70] A few TMCs (e.g., NbSe 2 , TaS 2 , VSe 2 ) have shown superconductivity, [71,72] charge density wave [73,74] and Mott transition (transition from metal to nonmetal). [75,76] In addition, some novel TMCs such as Fe 3 GeTe 2 display intrinsic magnetism with gate-tunable Curie points. [66,77] Semimetallic TMCs like WTe 2 show topological structures in the energy band, enabling the study on topological physics. [78,79] The rich intrinsic properties and superior tunability of TMCs hold great promise for all kinds of technologically important applications in electronics, optoelectronics, spintronics, valleytronics, etc. (Figure 1d). [51,[80][81][82][83][84][85][86][87][88][89][90][91] Due to numerous unique properties of 2D TMCs, devices such as transistors, photodetectors (PDs), and photodiodes based on 2D TMCs have been actively pursued. The ultimate destination of the miniaturization of the electronic devices will 2D transition metal chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of properties and superior tunability through layer number, composition, and inter...

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Universal Precise Growth of 2D Transition-Metal Dichalcogenides in Vertical Direction

Cited by 19 publications

References 45 publications

Phase‐Selective Synthesis of Ultrathin FeTe Nanoplates by Controllable Fe/Te Atom Ratio in the Growth Atmosphere

Phase‐Selective Synthesis of Ultrathin FeTe Nanoplates by Controllable Fe/Te Atom Ratio in the Growth Atmosphere

Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

Toward Wafer‐Scale Production of 2D Transition Metal Chalcogenides

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