Unveiling Suppressed Concentration Quenching Enhanced Broadband Near-Infrared Emitters

Abstract

Transition metal ions are exceptional emitters of broadband near-infrared (near-IR) luminescence, enabling various applications in photonics and optics; however, their weak absorption and excitation bands often limit conversion performance. Among potential sensitizers, Cr 3+ stands out, allowing the excitation of Ni 2+ with broadband visible-near-IR light while preserving luminescence properties. Nevertheless, concentration-induced quenching in doped luminescent solids fundamentally undermines brightness due to a trade-off between internal quantum efficiency and excitation energy dynamics. In this study, we demonstrate unprecedented brightness in the broadband near-IR photoluminescence (PL) of the Cr 3+ −Ni 2+ system, where single, heavily doped Cr 3+ exhibits minimal PL, and tuning Ni 2+ concentration offsets the competitive relationship between the light emitter and quencher. By coupling InGaN light-emitting diodes (LEDs) with an ultrabroadband near-IR PL phosphor, we achieve phosphor-converted LEDs with a record output power of 41.5 mW at 100 mA and a photoelectric efficiency of 19.53% at 20 mA, nearly doubling previous reports. Our findings unveil intrinsic suppression of concentration quenching and eliminate competing energy sinks by emphasizing the dominant role of emitters in downshifting excitation energies, thus opening new avenues for the design of bright, sensitized luminescent materials.