2024
DOI: 10.1016/j.sse.2024.108932
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Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs

Khoirom Johnson Singh,
Lomash Chandra Acharya,
Anand Bulusu
et al.
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