Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

Li, Qian; Hu, Jinpeng; Cui, Yaru; Wang, Juan; Yu, Hao; Shen, Tong; Duan, Lizhen

doi:10.3389/fchem.2021.621549

Cited by 2 publications

(1 citation statement)

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“…At the same time, the customary selenizing films using only Se source was also examined as reference. As shown in Figure 1A , all samples exhibit a pure kesterite crystal structure with main diffraction peaks of 27.28°, 45.25°, and 53.64°, which can be indexed to the (112), (204), and (312) planes of the CZTSSe phase (JCPDS # 52-0868) ( Xiao et al, 2016 ; Li et al, 2021 ). It is clear that introduction of Sb 2 Se 3 in selenization did not bring additional secondary phase.…”

Section: Resultsmentioning

confidence: 99%

Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells

et al. 2022

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Kesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaics have attracted considerable attention in recent years because of its low-cost and eco-friendly raw material, as well as high theoretical conversion efficiency. However, its photovoltaic performance is hindered by large open-circuit voltage (VOC) deficiency due to the presence of intrinsic defects and defect clusters in the bulk of CZTSSe absorber films. The doping of extrinsic cation to the CZTSSe matrix was adopted as an effective strategy to ameliorate defect properties of the solar cell absorbers. Herein, a novel Se&Sb2Se3 co-selenization process was employed to introduce Sb into CZTSSe crystal lattice. The results reveal that Sb-doping plays an active role in the crystallization and grain growth of CZTSSe absorber layer. More importantly, one of the most seriously detrimental SnZn deep defect is effectively passivated, resulting in significantly reduced deep-level traps and band-tail states compared to Sb free devices. As a result, the power conversion efficiency of CZTSSe solar cell is increased significantly from 9.17% to 11.75%, with a VOC especially enlarged to 505 mV from 449 mV. This insight provides a deeper understanding for engineering the harmful Sn-related deep defects for future high-efficiency CZTSSe photovoltaic devices.

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Section: Resultsmentioning

confidence: 99%

Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells

et al. 2022

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Fabrication, Structural, Optical, Electrical Properties and Influence of Complexing Agents on Ternary CuZnS2 Thin Film

Anuja

Thiruneelakandan

2021

Asian J. Chem.

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In the present work, copper zinc sulphide (CuZnS2) thin films with and without complexing agents using glass plate as substrate were prepared. Chemical bath deposition method was employed to deposit the thin films. Powder X-ray diffraction (PXRD) patterns of the prepared films indicate the crystalline nature of CuZnS2 with cubic phases. The SEM and AFM images illustrate that the deposited films were highly influenced on the polyhedral morphology by the complexing agents. The influence of complexing agents on absorbance and band gap of the CuZnS2 thin films were characterized using UV-Vis absorption studies. Hall effect measurements indicate the CuZnS2 thin film without surfactant belongs to p-type semiconductor and become n-type after adding the complexing agents EDTA and Leishman stain. From the I-V curve, all the samples having slow conducting nature was found for changing the voltage with the current from -32 nA to +30 nA using solar stimulator.

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Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

Cited by 2 publications

References 30 publications

Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells

Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells

Fabrication, Structural, Optical, Electrical Properties and Influence of Complexing Agents on Ternary CuZnS2 Thin Film

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