2021
DOI: 10.1016/j.matchemphys.2020.124052
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Utilization of As50Se50 thin films in electron beam lithography

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“…To study the application of EBL and IBL, Palka et al explored the applicability of As50Se50 thermal evaporation film in wet etching with amine solution in EBL and observed that the change of chemical resistance induced by light had the same trend as that induced by electron beam, and the chemical resistance increased significantly with the increase of irradiation dose. A diffraction grating with a period of 100 nm was prepared on As50Se50 film by EBL, as shown in Figure 4a [67]. Rius et al studied the influence of electron beam and ion beam on CMOS circuit damage by local exposure of selected region and specific position around CMOS circuit.…”
Section: Fabrication Methods Of Micro-structured Surfaces 21 Lithogra...mentioning
confidence: 99%
“…To study the application of EBL and IBL, Palka et al explored the applicability of As50Se50 thermal evaporation film in wet etching with amine solution in EBL and observed that the change of chemical resistance induced by light had the same trend as that induced by electron beam, and the chemical resistance increased significantly with the increase of irradiation dose. A diffraction grating with a period of 100 nm was prepared on As50Se50 film by EBL, as shown in Figure 4a [67]. Rius et al studied the influence of electron beam and ion beam on CMOS circuit damage by local exposure of selected region and specific position around CMOS circuit.…”
Section: Fabrication Methods Of Micro-structured Surfaces 21 Lithogra...mentioning
confidence: 99%