UV–Ozone Cleaning of GaAs for MBE

McClintock, J. A.; Wilson, Richard A.; Byer, N. E.

doi:10.1116/1.571365

Cited by 37 publications

(11 citation statements)

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“…The ability of UV radiation to produce ozone and decompose organic matter has been known for several decades with reports dating back as far as the early 1970's. 415,416 This attribute quickly led to the development of UV-assisted ozone cleaning processes and their application to a variety of surfaces including semiconductors (Si, 416,417 GaAs, 418,419 InP, 420 SiC, 421 GaN, 422 ...), amorphous oxides (SiO2, 415 ZnO, 423 ITO, 424 ...), 2D materials (graphene, 425 BN, 426…”

Section: V23 Uv-assisted Resist Strip and Cleaningmentioning

confidence: 99%

“…415,436 However, for UV/ozone cleaning of GaAs, a thicker (10 nm) surface oxide layer is formed and typically left in place and not removed until just before the underlying GaAs needs to be exposed. 419,420 Figure V.6. Pictorial schematic of UV/Ozone cleaning illustrating the various photochemical processes involved leading to organic contamination removal and substrate oxidation.…”

Section: V23 Uv-assisted Resist Strip and Cleaningmentioning

confidence: 99%

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Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

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Section: V23 Uv-assisted Resist Strip and Cleaningmentioning

confidence: 99%

Section: V23 Uv-assisted Resist Strip and Cleaningmentioning

confidence: 99%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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“…The UV/O 3 treatments described in this study employed a box in which was positioned a high intensity Hg lamp in close proximity to the SiC wafer. The details of this process have been described previously [15]. The wet chemistries examined included 10:1 HF, 10:1 buffered HF (7:1 NH 4 F:HF), 40% NH 4 F, HCI:HF, and NH 3 OH:HF solutions, HNO 3 , H 2 SO 4 , acetic, and lactic acid.…”

Section: Methodsmentioning

confidence: 99%

“…The in situ cleaning and the surface analyses of the samples subjected to ex situ and in situ cleaning were conducted in a unique ultra-high vacuum (UHV) system consisting of a 36 ft. long UHV transfer line to which were connected several surface analysis and thin film deposition units. The details of each and the transfer line have been described elsewhere [15]. Surfaces prepared in the above manner were then subsequently mounted to a molybdenum sample holder and loaded into the loadlock for subsequent analysis by AES, XPS, EELS, and LEED.…”

Section: Methodsmentioning

confidence: 99%

Ex Situ and In Situ Methods for Complete Oxygen and Non-Carbidic Carbon Removal from (0001)_SI 6H-SiC Surfaces

et al. 1996

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Comparisons between the wetting characteristics of (0001)si 6H-SiC and (111) Si surfaces in various acids and bases were made. It was found that 10:1 HF dipped Si (111) surfaces were hydrophobic where as the (0001)si 6H-SiC surfaces were hydrophilic. (0001)si 6H-SiC surfaces capped with a 20A Si layer, however, were hydrophobic after HF dipping and exhibited outgassing levels on annealing which were several orders of magnitude lower than SiC wafers dipped in HF without the capping layer. Annealing the Si capped (0001)si 6H-SiC surfaces in UHV at 1 100*C for 5 min. was found to be sufficient to thermally desorb the Si capping layer and produce a (3x3) Si rich, oxygen free (0001),i 6H-SiC surface.

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“…oxygen plasma "ashing" and UV-ozone photopyrolysis. [31,321 These latter techniques appear to have potential for the removal of hydrocarbon contamination from the surface of a wafer. However, the oxide that is produced may present difficulties in latter processing.…”

Section: Introductionmentioning

confidence: 98%

Experimental Investigation of GaAs Surface Oxidation

Matteson

Bowling

1985

MRS Proc.

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Experimental observations of the surface oxide chemistry of GaAs are reported for various commonly used chemical surface preparations. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and ellipsometry were employed to obtain information regarding the stoichiometry, depth distribution, and oxide growth kinetics of thin surface oxides.Previous observations of the segregation in depth of Ga and As oxides are corroborated. Arsenic oxides tend to be found near the surface while Ga203 is found near the GaAs-oxide interface. The presence of elemental As was frequently detected at this interface, as well. Surfaces essentially free from oxide are shown to be produced by certain chemical treatments, and the state of the surface in the solution is inferred. It is shown that the GaAs surface oxide stoichiometry can undergo several changes in a short time when exposed to water and air. In addition, the characterization of the oxidation of GaAs by ozone in the presence of intense ultraviolet illumination is reported. The oxide primarily consists of Ga203 and exhibits an interesting growth kinetics: the thickness of the oxide proceeds at first linearly, then logarithmically, then parabolically. This behavior is explained in terms of various mechanisms which are dominant at different thicknesses of oxide.

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UV–Ozone Cleaning of GaAs for MBE

Cited by 37 publications

References 0 publications

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Ex Situ and In Situ Methods for Complete Oxygen and Non-Carbidic Carbon Removal from (0001)_SI 6H-SiC Surfaces

Experimental Investigation of GaAs Surface Oxidation

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UV–Ozone Cleaning of GaAs for MBE

Cited by 37 publications

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Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Ex Situ and In Situ Methods for Complete Oxygen and Non-Carbidic Carbon Removal from (0001)SI 6H-SiC Surfaces

Experimental Investigation of GaAs Surface Oxidation

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Ex Situ and In Situ Methods for Complete Oxygen and Non-Carbidic Carbon Removal from (0001)_SI 6H-SiC Surfaces