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Guglielmi, M; Menegazzo, E.; Paolizzi, M.; Gasparro, Guido; Ganz, Dietmar; Pütz, Jörg; Aegerter, Michel A.; Hubert‐Pfalzgraf, Liliane G.; Pascual, C.; Durán, Alicia; Willems, H.; Bommel, M. Van; Büttgenbach, L.; Costa, L.

doi:10.1023/a:1008636804449

Cited by 22 publications

(11 citation statements)

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“…Tin dioxide is an n-type, wide bandgap semiconductor (about 3.5 eV) and in the form of thin films, it is a transparent conducting material, characterized by high optical transmission (80-90%) 1 . Optical, electrical and structural properties make tin dioxide very attractive for many kind of applications in opto-electronic devices 2 , gas sensors [3][4][5] and solar collectors 6,7 . Moreover, doping tin dioxide with electronic donors as For Sb 5+ yields a high conductivity without significant changes in its optical transmittance 8 .…”

Section: Introductionmentioning

confidence: 99%

Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel

Geraldo¹,

Scalvi

Morais³

et al. 2003

Mat. Res.

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Transparent electrically conducting antimony-doped SnO2 thin films have been prepared by sol-gel dip-coating process from colloidal aqueous suspension. The effect of doping content on the structural, optical and electrical properties is analyzed. Results from infrared optical transmission and reflection have shown that the higher the Sb concentration the lower the transmission intensity and the higher the reflection signal. Absorption intensity increases as well. Results of X-ray reflectometry and electron microscopy have shown that the density of films fired at 400 °C after each dip is higher than that of multi-dipped films prepared with a single annealing. Both the electrical characteristics in the dark and the increase in conductivity as function of illumination through different filters, at 190 K, evidence that the transport properties of these films are dominated by the presence of defects, including the trapping at grain boundary due to excess of oxygen

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Section: Introductionmentioning

confidence: 99%

Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel

Geraldo¹,

Scalvi

Morais³

et al. 2003

Mat. Res.

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“…These values are consistent with our deduced value (2.10). For sol-gel SnO 2 thin films, Guglielmi et al[32] have reported a value range about 1.65-1.75. It should be noted that the excitation of the optical modes of SnO 2 layers is unsuccessful due to the small difference of the refractive index squares between SnO 2 film and glass substrate.…”

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confidence: 99%

Study of TiO₂, SnO₂ and nanocomposites TiO₂:SnO₂ thin films prepared by sol-gel method: Successful elaboration of variable–refractive index systems

Medjaldi

Bouabellou

Bouachiba

et al. 2020

Mater. Res. Express

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In this research TiO 2 , SnO 2 and TiO 2 :SnO 2 nanocomposite thin films were fabricated by the sol-gel dip coating technique. The mixture was prepared by varying the molar ratio of SnO 2 to TiO 2 , i.e. TiO 2 :SnO 2 (9:1), TiO 2 :SnO 2 (8:2) and TiO 2 :SnO 2 (6:4)). The obtained samples were characterized by means of the Raman microscopy, Scanning Electron Microscopy (SEM), UV-Vis spectrophotometry and m-lines spectroscopy (Prism coupler). Raman analysis shows that pure TiO 2 and SnO 2 thin films are characterized by the vibrational modes of anatase and rutile cassiterite, respectively. Furthermore, the Raman spectra of the TiO 2 :SnO 2 nanocomposites show the presence of a mixture of anatase and rutile TiO 2 phases. The SEM images reveal that the morphology is clearly modified with SnO 2 content. The ripples in the transmittance spectra decreased with increasing SnO 2 content. Also, the evolution of the optical band gap seems to be consistent with the Raman analysis. A great attention has been paid to the refractive index measurements by the prism coupler technique. In this way, variable-refractive index systems have been successfully obtained using TiO 2 :SnO 2 nanocomposite thin films.

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“…The calculated µ opt reflects the in-grain scattering because the NIR excitation is assumed to deflect free electrons only over a few nm, i.e., shorter than the grain size and without allowing them to cross grain boundaries. 24 In contrary, the mobility µ Hall obtained from Hall effect measurements accounts for both intra-grain and grain boundary scattering since electrons are transported through the layer across a large number of grains. Fig.…”

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confidence: 99%

Limits of carrier mobility in Sb-doped SnO₂conducting films deposited by reactive sputtering

et al. 2015

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Cited by 22 publications

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Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel

Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel

Study of TiO₂, SnO₂ and nanocomposites TiO₂:SnO₂ thin films prepared by sol-gel method: Successful elaboration of variable–refractive index systems

Limits of carrier mobility in Sb-doped SnO₂conducting films deposited by reactive sputtering

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Untitled

Cited by 22 publications

References 0 publications

Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel

Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel

Study of TiO2, SnO2 and nanocomposites TiO2:SnO2 thin films prepared by sol-gel method: Successful elaboration of variable–refractive index systems

Limits of carrier mobility in Sb-doped SnO2conducting films deposited by reactive sputtering

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Study of TiO₂, SnO₂ and nanocomposites TiO₂:SnO₂ thin films prepared by sol-gel method: Successful elaboration of variable–refractive index systems

Limits of carrier mobility in Sb-doped SnO₂conducting films deposited by reactive sputtering