Vacancy Cluster Distributions in He Implanted Silicon Studied by Slow Positron Annihilation Spectroscopy

Abstract

The open volume defects density decreases, reaching a minimum at 250°C. In the 250-650°C temperature range there is an increase in defects due to the appearance of vacancy clusters. At the higher annealing temperatures (700-900°C) the vacancy clusters disappear only in the samples implanted at 5 x 10 15 cm -2 .