Vacancy-hydrogen defects in silicon studied by Raman spectroscopy

Lavrov, E. V.; Weber, Jens; Huang, Lixiao; Nielsen, Bjarne

doi:10.1103/physrevb.64.035204

Cited by 40 publications

(52 citation statements)

References 17 publications

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“…3). The 2022 cm -1 line can be attributed to the VH complex [2], but in our experiment this line is very weak and probably superposed by other vacancy-hydrogen signals. The spectra of the as implanted samples show several overlapping lines in the range of 1800 -2300 cm -1 , which can be assigned to various V n H m complexes (Fig.…”

Section: Resultscontrasting

confidence: 67%

“…3). For instance VH 2 is ascribed by a so called B 1 mode at 2099 cm -1 and an A 1 mode at 2120 cm -1 [2]. As can be seen in Fig.…”

Section: Resultsmentioning

confidence: 79%

“…The Raman lines at ~ 2185 cm -1 (A 1 mode) and ~ 2155 cm -1 (E mode) can be attributed to VH 3 . But this complex does not significantly deviate from the fully hydrogen terminated di-vacancy (V 2 H 6 ) with its A 1 mode and E modes at ~ 2180 cm -1 and ~ 2155 cm -1 , respectively [2]. Hence, these both types of vacancy-hydrogen complexes are at close quarters and not exactly assignable.…”

Section: Resultsmentioning

confidence: 83%

“…The spectra were normalized to the maximum intensity of the silicon phonon line (at ~ 520 cm -1 ). The spectral ranges between 1800 cm -1 and 2300 cm -1 and between 3700 cm -1 and 4300 cm -1 of the hydrogen implanted silicon samples have been well investigated by Raman spectroscopy and infrared-(IR) transmissionspectroscopy [2][3][4][5][6][7][8][9][10][11][12][13][14]. Based on this information, some prominent hydrogen related Raman active local vibration modes (LVM), which could be assigned for our samples, are presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

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μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process

Düngen

Job

et al. 2005

MRS Proc.

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Hydrogen implanted, boron doped (100) Czochralski silicon wafers, which were annealed after implantation up to 600 °C, are investigated by µ -Raman spectroscopy (µRS). We have studied the thermal evolution of hydrogen related defects, including vacancy-hydrogen (V n H m ) complexes, H-saturated dangling bonds and trapped H 2 molecules. Applying temperatures above ~ 400 °C, the hydrogen related defects and the formation of voids/platelets are distinctly modified. The measured intensity of the local vibration mode (LVM) of H 2 molecules trapped in multi-vacancy complexes at a frequency of ~ 3820 cm -1 decreases while the LVM of H 2 in platelets or larger voids (~ 4150 cm -1 ) is increasing. This indicates that multi-vacancy complexes coalesce and form larger voids/platelets. Most of the V n H m complexes (~ 2000 -2200 cm -1 ) are dissolved during annealing at 600 °C, where a thin silicon layer exfoliates due to the ion-cut mechanism. However, the Raman modes of the characteristic V 2 H 6 complex, of Si-H x bonds stemming from H-terminated surfaces and of H 2 located in voids/platelets still can be observed after a short time annealing (≤ 2 min) at 600 °C.

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Section: Resultscontrasting

confidence: 67%

“…3). For instance VH 2 is ascribed by a so called B 1 mode at 2099 cm -1 and an A 1 mode at 2120 cm -1 [2]. As can be seen in Fig.…”

Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process

Düngen

Job

et al. 2005

MRS Proc.

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“…Therefore, it can be expected that beside the observed LVM at ∼1960 cm -1 also some other Raman modes of I x -H y defect species are hidden in the broad flank of our Raman spectra in this spectral range (i.e. IH, IH 2 , I 2 H 2 (7,10,12,13)). In general one can say that the LVMs of vacancies, which are saturated only by one hydrogen atom are located in the spectral range below 2100 cm -1 and the LVMs of vacancy-hydrogen complexes, which are completely saturated by hydrogen (V 2 H 6 , VH 4 ), in the spectral range significantly above 2100 cm -1 .…”

Section: Smart-cut® Scenariomentioning

confidence: 93%

From Smart-Cut to Soft-Cut: Mechanisms of Hydrogen Plasma Supported Layer Exfoliation in Silicon

Job¹,

Düngen²,

Ma³

et al. 2006

ECS Trans.

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Comparative investigations of silicon layer exfoliation within the Smart-Cut process and its progression at lower H+ implantation doses and subsequent H-plasma exposure (Soft-Cut) were done by µ-Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM) on (100)-oriented Cz Si wafers. Blister formation and evolution at various process temperatures were analyzed to clarify the mechanisms of layer exfoliation for both approaches. On base of the Raman analyses and supporting SEM and AFM measurements of samples prepared under various process temperatures, we identified the V2H6 defect complexes as the precursor of blisters for the Smart-Cut scenario. Under Soft-Cut conditions (100)-oriented platelets created during H-plasma exposure can be identified as the prevailing precursors of blisters.

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Substitutional carbon defects in silicon: A quantum mechanical characterization through the infrared and Raman spectra

et al. 2020

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The infrared (IR) and Raman spectra of eight substitutional carbon defects in silicon are computed at the quantum mechanical level by using a periodic supercell approach based on hybrid functionals, an all electron Gaussian type basis set and the CRYSTAL code. The single substitutional C s case and its combination with a vacancy (C s V and C s SiV) are considered first. The progressive saturation of the four bonds of a Si atom with C is then examined. The last set of defects consists of a chain of adjacent carbon atoms C i s , with i = 1-3. The simple substitutional case, C s , is the common first member of the three sets. All these defects show important, very characteristic features in their IR spectrum. One or two C related peaks dominate the spectra: at 596 cm −1 for C s (and C s SiV, the second neighbor vacancy is not shifting the C s peak), at 705 and 716 cm −1 for C s V, at 537 cm −1 for C 2 s and C 3 s (with additional peaks at 522, 655 and 689 for the latter only), at 607 and 624 cm −1 , 601 and 643 cm −1 , and 629 cm −1 for SiC 2 s , SiC 3 s , and SiC 4 s , respectively. Comparison with experiment allows to attribute many observed peaks to one of the C substitutional defects. Observed peaks above 720 cm −1 must be attributed to interstitial C or more complicated defects. K E Y W O R D Sab initio calculation, IR and Raman spectra, silicon, substitutional carbon defect

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Vacancy-hydrogen defects in silicon studied by Raman spectroscopy

Cited by 40 publications

References 17 publications

μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process

μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process

From Smart-Cut to Soft-Cut: Mechanisms of Hydrogen Plasma Supported Layer Exfoliation in Silicon

Substitutional carbon defects in silicon: A quantum mechanical characterization through the infrared and Raman spectra

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