Vanishing Zeeman energy in a two-dimensional hole gas

Del Vecchio, Patrick; Lodari, Mario; Sammak, Amir; Scappucci, Giordano; Moutanabbir, Oussama

doi:10.48550/arxiv.2006.00102

Cited by 1 publication

(1 citation statement)

References 46 publications

(66 reference statements)

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“…This model is valid for wires with a large cross-section, where c is the smallest energy scale and one can neglect the coupling to the split-off holes, gapped by a large energy ∆ 0 . In contrast, for small Si wires, ∆ 0 is comparable with c and because of the influence of the SOHs, the ground-state dynamics of the wire depends non-trivially on the side L of the cross-section [82]. As anticipated in Sec.…”

Section: Spin-orbit In Small Wiresmentioning

confidence: 79%

Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise

Bosco,

Hetényi,

Loss

2020

Preprint

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The strong spin-orbit coupling in hole spin qubits enables fast and electrically tunable gates, but at the same time enhances the susceptibility of the qubit to charge noise. Suppressing this noise is a significant challenge in semiconductor quantum computing. Here, we show theoretically that hole Si FinFETs are not only very compatible with modern CMOS technology, but they present operational sweet spots where the charge noise is completely removed. The presence of these sweet spots is a result of the interplay between the anisotropy of the material and the triangular shape of the FinFET cross-section, and it does not require an extreme fine-tuning of the electrostatics of the device. We present how the sweet spots appear in FinFETs grown along different crystallographic axes and we study in detail how the behaviour of these devices change when the cross-section area and aspect ratio are varied. We identify designs that maximize the qubit performance and could pave the way towards a scalable spin-based quantum computer.

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Section: Spin-orbit In Small Wiresmentioning

confidence: 79%