Vertical self-powered ultraviolet photodetector using α-Ga2O3 thin films on corundum structured rh-ITO electrodes

Shimazoe, Kazuki; Nishinaka, Hiroyuki; Taniguchi, Yoko; Kato, Takahiro; Kanegae, Kazutaka; Yoshimoto, Masahiro

doi:10.1016/j.matlet.2023.134282

Cited by 7 publications

(1 citation statement)

References 11 publications

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“…The metastable α-Ga 2 O 3 polymorph has the largest band gap among other Ga 2 O 3 polymorphs, with E g ~ 5.0−5.3 eV [12,13] . The crystal lattice of the corundum-like α-Ga 2 O 3 is similar to that of α-Al 2 O 3 [14,15] , enabling the growth of high-quality α-Ga 2 O 3 films with low dislocation density on commercially available substrates through heteroepitaxy. Additionally, the α-Ga 2 O 3 crystal lattice has higher symmetry, making it an attractive option for solar-blind ultraviolet detector development.…”

Section: Introductionmentioning

confidence: 99%

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Almaev,

Tsymbalov,

Kushnarev

et al. 2024

J. Semicond.

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Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

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Section: Introductionmentioning

confidence: 99%

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Almaev,

Tsymbalov,

Kushnarev

et al. 2024

J. Semicond.

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Alloying Ga₂O₃ with Fe₂O₃ on Corundum‐Structured rh‐ITO by Mist CVD and Its Demonstration of Photodetector and Photoelectrode Applications

Kondo,

Shimazoe,

Nishinaka

2024

Physica Status Solidi (b)

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Corundum‐structured α‐Ga2O3 is an ultrawide bandgap semiconductor with a bandgap of 5.3 eV and is actively investigated for applications in power electronics and optoelectronic devices. This study explores bandgap engineering of α‐Ga2O3 to broaden its application field. By alloying α‐Fe2O3, which has the same corundum structure as α‐Ga2O3, the bandgap can be tuned from 2.2 to 5.3 eV. This allows α‐Ga2O3 to be used as a visible‐light‐driven photocatalyst by narrowing its bandgap. Herein, (Ga, Fe)2O3 alloy thin films are grown on corundum‐structured indium tin oxide (rh‐ITO) electrodes for photocatalytic applications. X‐ray diffraction 2θ–ω measurements reveal that corundum‐structured α‐(Ga, Fe)2O3 thin films are grown on rh‐ITO electrodes with up to ≈20% Ga composition. At higher Ga compositions, orthorhombic ε‐GaFeO3 and amorphous Ga2O3 are observed on the rh‐ITO electrode. Photoresponsivity measurements using a photodetector structure confirm that the thin films exhibit visible light sensitivity upon alloying Fe2O3 with Ga2O3. Linear sweep voltammetry measurements indicate that the α‐(Ga, Fe)2O3 thin film grown on rh‐ITO can serve as a visible light‐driven photoelectrode. The findings contribute to the bandgap engineering of α‐Ga2O3 and its application in photocatalysis.

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A review on synthesis and applications of gallium oxide materials

Zhang,

Kuang,

et al. 2024

Advances in Colloid and Interface Science

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Vertical self-powered ultraviolet photodetector using α-Ga2O3 thin films on corundum structured rh-ITO electrodes

Cited by 7 publications

References 11 publications

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Alloying Ga₂O₃ with Fe₂O₃ on Corundum‐Structured rh‐ITO by Mist CVD and Its Demonstration of Photodetector and Photoelectrode Applications

A review on synthesis and applications of gallium oxide materials

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Vertical self-powered ultraviolet photodetector using α-Ga2O3 thin films on corundum structured rh-ITO electrodes

Cited by 7 publications

References 11 publications

Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance

Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance

Alloying Ga2O3 with Fe2O3 on Corundum‐Structured rh‐ITO by Mist CVD and Its Demonstration of Photodetector and Photoelectrode Applications

A review on synthesis and applications of gallium oxide materials

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Product

Resources

About

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Alloying Ga₂O₃ with Fe₂O₃ on Corundum‐Structured rh‐ITO by Mist CVD and Its Demonstration of Photodetector and Photoelectrode Applications