Via Resistance Reduction in Advanced Copper Interconnects

Yang, Chih‐Chao; Spooner, T.; McLaughlin, P.; Quon, R.; Standaert, T.; Edelstein, D.

doi:10.1109/led.2016.2628813

Cited by 15 publications

(6 citation statements)

References 7 publications

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“…In this work, we consider several representative Co via structures and calculate the spin-dependent electron transmission across each interface structure. First, we consider the simple Co/TaN/Co and Co/Ta/Co interface structures, which are analogues of the Cu-based barrier metal schemes involving either TaN or Ta diffusion barriers [51]. TaN is taken to be hexagonal and Ta is taken to be body-centered cubic (BCC), which are consistent with previous analyses for Cu vias [46,48].…”

Section: Vertical Resistance At Co/metal/co Interfacesmentioning

confidence: 99%

“…Thus, whenever an electron travels from one level of horizontal interconnect wiring to an adjacent level of interconnect wiring, it must travel through this thin metallic layer. In Cu interconnects, the presence of thin metallic layers at the bottom of vias results in dramatic increases in vertical resistance at narrow interconnect dimensions [46,48,51].…”

Section: Vertical Resistance At Co/metal/co Interfacesmentioning

confidence: 99%

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Spin-dependent electron scattering in cobalt interconnects

Lanzillo¹,

Bhosale²,

Lavoie

et al. 2019

J. Phys. D: Appl. Phys.

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We use state-of-the-art ab initio simulation methods to study fundamental electron scattering mechanisms in cobalt conductors for applications in advanced interconnect technology. In particular, we consider electron scattering at intrinsic defect sites, twin grain boundaries, and at the Co/metal/Co interfaces present in vertical interconnects. Effective resistivity values and reflection coefficients are calculated in each case. The explicit treatment of electron spin results in distinct majority and minority spin behavior, with majority spin states exhibiting less scattering than minority states. Our results indicate that grain boundary scattering dominates over scattering at intrinsic point defect sites. Vertical resistance calculations indicate that Co vias can have substantially lower resistance than corresponding Cu vias at comparable dimensions. These results help build a fundamental understanding of electron scattering mechanisms in non-Cu conductors for advanced interconnect applications.

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Section: Vertical Resistance At Co/metal/co Interfacesmentioning

confidence: 99%

Section: Vertical Resistance At Co/metal/co Interfacesmentioning

confidence: 99%

Spin-dependent electron scattering in cobalt interconnects

Lanzillo¹,

Bhosale²,

Lavoie

et al. 2019

J. Phys. D: Appl. Phys.

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“…Through-silicon vias (TSVs) are vertical conductive structures used to connect ICs or MEMS devices on the top surface of a silicon wafer with others at the bottom of the same wafer, or to use the wafer as interposer layer between two separate substrates. TSVs increase functional density and device performance while reducing interconnection-related parasitic effects [1][2][3][4][5]. Increasing interest has been recently directed toward the possibility of using TSVs at extreme cryogenic temperatures.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Al-Based Superconducting High-Aspect Ratio TSVS for Quantum 3D Integration

Alfaro-Barrantes

Mastrangeli

Thoen

et al. 2020

2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS)

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We describe a microfabrication process that, thanks to a specifically tailored sidewall profile, enables for the firsttime wafer-scale arrays of high-aspect ratio through-silicon vias (TSVs) coated with DC-sputtered Aluminum, achieving at once superconducting and CMOS-compatible 3D interconnects. Void-free conformal coating of up to 500 μmdeep and 50 μm-wide vias with a mere 2 μm-thick layer of Al, a widely available metal in for IC manufacturing, was demonstrated. Single-via electric resistance as low as 468 mΩ at room temperature and superconductivity at 1.25 K were measured by a cross-bridge Kelvin resistor structure. This work establishes the fabrication of functional superconducting interposers suitable for 3D integration of highdensity silicon-based quantum computing architectures.

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“…The detrimental properties of Cu result in a significant risk of an unintentional contamination of active structures in modern microelectronics. As a solution to prevent a Cu contamination, mitigating measures—e.g., tantalum diffusion barriers—were proposed . Platinum is often considered as a protection and a diffusion barrier in multilayer contact pads .…”

Section: Introductionmentioning

confidence: 99%

“…As a solution to prevent a Cu contamination, mitigating measures-e.g., tantalum diffusion barriers-were proposed. [2,3] Platinum is often considered as a protection and a diffusion barrier in multilayer contact pads. [4,5] An understanding of copper-platinum-related electrically active defects in Si is not only important from a scientific point of view, but it also has some technological relevance.…”

Section: Introductionmentioning

confidence: 99%

Platinum–Copper Defects in Silicon

Kolkovsky

Weber

2019

Physica Status Solidi (a)

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The interaction of interstitial Copper (Cui) with substitutional platinum impurities (Pts) in n‐type FZ silicon wafers is studied by deep level transient spectroscopy (DLTS) and Laplace DLTS. Copper is introduced into silicon, which is Pt doped during growth, using chemo‐mechanical polishing (CMP) at room temperature in a copper‐contaminated slurry. After the CMP process, four new levels i.e., E80, E131, E147, and E271 are observed. These levels are only observed in Pt‐doped samples. From an analysis of the depth profiles of the new levels, it is ruled out, that the levels belong to different charge states of the same defect. The sum of concentrations of all depth profiles give a constant concentration of about 3 × 1014 cm−3, which corresponds to the total PtS concentration in the samples. Therefore, the new levels are attributed to several different defects which contain one substitutional Pt and several (1–4) interstitial Cu atoms.

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Via Resistance Reduction in Advanced Copper Interconnects

Cited by 15 publications

References 7 publications

Spin-dependent electron scattering in cobalt interconnects

Spin-dependent electron scattering in cobalt interconnects

Fabrication of Al-Based Superconducting High-Aspect Ratio TSVS for Quantum 3D Integration

Platinum–Copper Defects in Silicon

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