Visible light emission from polymer-based field-effect transistors

Abstract

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Organic Light‐Emitting Transistors Based on Solution‐Cast and Vacuum‐Sublimed Films of a Rigid Core Thiophene Oligomer

“…The controlled fabrication of highly periodic metal, [1] semiconductor, [2,3] or molecular [4] nanostructures at surfaces remains, however, a challenging endeavor in nanoscience research. Large quantities of structures can be created in parallel by self-organized growth, either in the kinetic, [5] or thermodynamic regime, [2,3,6] and deposition of size-selected clusters from the gas phase.…”

“…Polymerbased OLETs, where the active layer has been processed by spin coating, have been obtained from poly(9,9-diethylhexylfluorene) [3] and poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene]. [4] A co-evaporated layer of a-quinquethiophene (T5) and N,N-8-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) has been used to produce the first ambipolar OLET.…”

Biotronics

“…The gate bias controls the location of the light emission (135,129) . In these light emitting FETs, high performance is obtained from the simultaneous injection of holes from the drain and electrons from the source (129) .…”

Multilayer Approach in Light-Emitting Transistors

“…In the same year, Omayada et al showed also a new single layer unipolar OLET with an EQE of almost 0.8%, made with a blend of 1wt%-rubrene doped tetraphenylpyrene (TPPy) (Omayada et al, 2005b). Other studies have been done using spin-coated or drop-casted polymers like polyphenylenevinylene, poly-fluorene or poly-arylenevinylene derivatives (Sakanoue et al, 2004;Ahles et al, 2004;Swensen et al, 2005a) as active layer. These experiments, besides showing a possible extension of the concept of unipolar OLET, demonstrated the feasibility of wet-technique fabrication process that could open up many possibilities of large-area and low cost devices.…”