Visible light response in 2D QBi (Q=Si, Ge and Sn) monolayer semiconductors: A DFT based study

Niasadegh, Noureddin; Naseri, Mosayeb; Rezaee, Sahar

doi:10.1016/j.mtcomm.2023.105886

Cited by 2 publications

(1 citation statement)

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“…III–V group semiconductors are widely used in various advanced industries, including electronics, information, communications, and energy, due to their wide band gap, big Baliga FOM, and short adsorption edge. − For these III–V group semiconductors, Si-based and Ge-based compounds are known as the first-generation semiconductors, which promote the development of information technology. , GaAs-based and InP-based compounds are regarded as second-generation semiconductors, which are used in high-power and high-frequency devices, radio communication, and infrared LEDs. , GaN and SiC are regarded as the third-generation semiconductors, which are potentially applied in electronic mobility transistors, ultraviolet photodetectors, lasers, power devices, and short-wavelength photoelectric devices. , …”

Section: Introductionmentioning

confidence: 99%

Prediction of the Structural, Mechanical, and Physical Properties of GaC: As a Potential Third-Generation Semiconductor Material

Pan

2024

Inorg. Chem.

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Similar to GaN and SiC semiconductors, GaC may be a potential semiconductor because of the mixed elemental features of Ga and C. Unfortunately, the phase stability and mechanical and physical properties of GaC are unknown. To search for novel third-generation semiconductors, the present study delves into an in-depth analysis of the structural stability and electronic and optical properties of GaC by DFT calculations. Similar to GaN, three GaC phases are discussed. It is found that three GaC phases (two cubic phases and one hexagonal phase) are first predicted. The band gaps of Fm3̅ m, F4̅ 3m, and hexagonal GaC are 0.449, 2.733, and 3.340 eV, respectively. In particular, the band gap of F4̅ 3m GaC and hexagonal GaC is bigger than that of GaN. Compared to GaN semiconductors, the C-2p state is in the valence band region across the Fermi level, which is beneficial to electronic mobility and electronic transport capacity near the Fermi level. In addition, three GaC phases exhibit ultraviolet properties. The first peak of three GaC phases produces the right migration compared to the GaN semiconductor. Therefore, the author predicts that GaC is a potential third-generation semiconductor material which is potentially used in future third-generation semiconductor industries.

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