2018
DOI: 10.1016/j.spmi.2017.12.014
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Visible light sensitive cupric oxide metal-semiconductor-metal photodetectors

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Cited by 49 publications
(11 citation statements)
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“…Bending vibration of H-O-H and stretching vibration of O-H was assigned to the peaks at 1683 cm −1 and 3317 cm −1, respectively [36]. By the addition of Ag then Co in the samples S2, S3, and S4, a little shift was observed in the main absorption peaks of CuO NPs.…”
Section: Ft-ir Studiesmentioning
confidence: 95%
“…Bending vibration of H-O-H and stretching vibration of O-H was assigned to the peaks at 1683 cm −1 and 3317 cm −1, respectively [36]. By the addition of Ag then Co in the samples S2, S3, and S4, a little shift was observed in the main absorption peaks of CuO NPs.…”
Section: Ft-ir Studiesmentioning
confidence: 95%
“…To clearly understand the superior optoelectronic performances of the proposed device, we compared the performance of the device ( CD = 300 nm) with those of other photodetectors. To the best of our knowledge, compared to recently developed CuO-based photodetectors (Table 1 ) 17 28 , 30 , 42 , the proposed device exhibited state-of-the-art levels of photo-responsivity, photo-detectivity, sensitivity, and response time. One further advantage of the proposed device is its compatibility with conventional semiconductor fabrication.…”
Section: Resultsmentioning
confidence: 86%
“…Therefore, it can be effectively used for the photodetector application. Previous literature shows a limited work on the copper oxide film-based photodetectors [26,[29][30][31]. Particulaly, improvement in the performance of CuO photodetectors through annealing has been rearly investigated as compared to other photodetectors [29].…”
Section: Introductionmentioning
confidence: 99%
“…Previous literature shows a limited work on the copper oxide film-based photodetectors [26,[29][30][31]. Particulaly, improvement in the performance of CuO photodetectors through annealing has been rearly investigated as compared to other photodetectors [29]. In this work, thin film of CuO has been deposited and characterized for the fabrication of a metal-emicondcutor-metal photodetector and its performance has been improved through the annealing process.…”
Section: Introductionmentioning
confidence: 99%