VLSI Device fabrication using a unique, highly-selective Si&lt;inf&gt;3&lt;/inf&gt;N&lt;inf&gt;4&lt;/inf&gt;dry etching

Kure, T.; Kawamoto, Yukinori; Hashimoto, N.; Takaichi, Tomoaki

doi:10.1109/iedm.1983.190622

1983 International Electron Devices Meeting 1983

DOI: 10.1109/iedm.1983.190622

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VLSI Device fabrication using a unique, highly-selective Si<inf>3</inf>N<inf>4</inf>dry etching

T. Kure

Yukinori Kawamoto

N. Hashimoto

et al.

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VLSI Device fabrication using a unique, highly-selective Si<inf>3</inf>N<inf>4</inf>dry etching

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