VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

Zhang, Dong; Sun, Hongjun; Wang, Minhuan; Liu, Miao; Liu, Hong-Zhu; Zhang, Yuzhi; Bian, Jiming

doi:10.3390/ma10030314

Cited by 24 publications

(7 citation statements)

References 23 publications

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“…A ceramic heater is used to vary the temperature of the VO 2 film, assisted by a thermocouple for recording the temperature, and tungsten probes connected to a data acquisition unit for measuring the surface resistance. The results are plotted in Figure 6 , and summarized in Table 2 , and are among the best reported in the literature, confirming the high quality of our VO 2 thin film [ 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 ].…”

Section: Resultssupporting

confidence: 81%

Infrared Transmission Characteristics of Phase Transitioning VO2 on Various Substrates

et al. 2022

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Infrared transmission characteristics of VO2 thin films synthesized on multiple substrates, using a low-pressure direct oxidation technique, have been characterized. Material characterization of these films indicates high material quality, which resulted in large variation of electrical and optical properties at phase transition. A change in optical transmissivity greater than 80% was observed for these films utilizing infrared (IR) laser illumination at 1550 nm. Phase transition enabled by temperature change induced by a pulsed high-power laser beam resulted in modulated IR laser transmission with a low time constant in VO2 on transparent quartz and muscovite substrates. Investigation of the effect of mechanical strain on phase transition in VO2 grown on flexible muscovite substrate indicate shift in transition temperature to higher for tensile and lower for compressive strains.

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Section: Resultssupporting

confidence: 81%

Infrared Transmission Characteristics of Phase Transitioning VO2 on Various Substrates

et al. 2022

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“…To get the precise valence state of vanadium in oxide, a high‐resolution XPS spectrum focusing between 510 and 540 eV is displayed in Figure b. Two peaks, centered at 516 and 523.6 eV, are associated with the spin–orbit splitting of V2p 3/2 and V2p 1/2 , which are in good agreement with the V 4+ oxidation state . In addition, the peak at 529.9 eV is associated with O1s corresponding to the binding energy of VO.…”

Section: Resultsmentioning

confidence: 84%

Development of VO₂‐Nanoparticle‐Based Metal–Insulator Transition Electronic Ink

Vaseem

Yang

et al. 2019

Adv Elect Materials

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phase-change temperature. In addition, VO 2 also possesses different polymorphisms, including VO 2 (A), [6] VO 2 (B), [7,8] VO 2 (D), [9] VO 2 (M), [10] VO 2 (R), [11] and VO 2 (P). [12] Among them, the VO 2 monoclinic (M) phase is the most attractive due to its MIT behavior at a relatively low temperature of 68 °C. [13] However, the simultaneous creation of polymorphs results in a mixture phase and makes it extremely difficult to achieve a pure VO 2 (M) phase. The MIT temperature of VO 2 (M) can also be further reduced by doping [14] and by varying the particle sizes. [10,12] This makes VO 2 a promising material for many practical applications, including sensors, [15] thermochromic smart windows, [16] field effect transistors, [17] radio-frequency (RF) switches, [18] terahertz nanoantennas, [19] reconfigurable antennas, [20] memory, [21] and energy. [22,23] Due to the exciting applications mentioned above, considerable effort has been devoted to producing VO 2 (M) in the form of a thin film, primarily with a dry vapor process using chemical vapor deposition, [24] sputtering, [25] metalorganic molecular beam epitaxy deposition, [26] pulsed laser deposition, [27,28] e-beam evaporation, [29] and by electric field inducing ions migration. [30] On the other hand, several bulk nanomaterials in solution processes with different shapes and sizes using sol-gel [31] and hydrothermal synthesis [32] are reported. The VO 2 thin-film deposition techniques using dry vapor processes require an ultrahigh level of vacuum conditions (10 −6 Torr) and sometimes very high processing temperatures (400-600 °C). The process also requires expensive masks and nanolithography for device prototyping. However, the solution-based VO 2 preparation processes are the simplest, require lower processing temperatures, and are highly scalable. Among the solution-based processes, hydrothermal synthesis is the most widely adopted technique due to its high-quality and purephase VO 2 nanomaterial production. [5] The only disadvantage of hydrothermal synthesis is the longer reaction time required, up to 2-4 d, to achieve pure VO 2 (M). For practical applications, VO 2 (M) nanostructures must be deposited in the form of films. Spin coating is one technique to realize VO 2 films, but large-area processing and direct patterning are not possible. [31] With the surge in inkjet printing, which is extremely low cost, completely digital, and highly suitable for rapid prototyping or large-scale manufacturing, realizing VO 2 film through inkjet The metal-insulator transition (MIT) phase change of vanadium dioxide (VO 2 ) materials has facilitated many exciting applications. Among the various crystal phases of VO 2 , the monoclinic (M) phase is the only one that demonstrates low-temperature (≈68 °C) MIT behavior. However, the synthesis of pure VO 2 (M) is challenging because various polymorphs, such as VO 2 (A), VO 2 (B), and VO 2 (D), are also typically formed during the process. Furthermore, to achieve pure crystalline VO 2 (M) phase, very long reaction times, up...

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“…The phase inhomogeneity inVO 2 bulk or thin films limits their potential applications by rendering the MIT phase transition broad and diffusive [3,7]. The effects of strain, grain size, stoichiometry, substrate temperature, and substrate material have been extensively studied and optimized to achieve good crystallinity with a higher optical transmittance and a higher near-IR switching contrast [8,9,10,11,12,13,14,15]. In addition to optical transmittance and switching contrast enhancement, extensive efforts have been devoted to modifying the transition temperature ( T t ) of VO 2 .…”

Section: Introductionmentioning

confidence: 99%

The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior

Zhang

Güneş

et al. 2019

Materials

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In this work, VO2 thin films were deposited on Si wafers (onto (100) surface) by DC magnetron sputtering under different cathode bias voltages. The effects of substrate biasing on the structural and optical properties were investigated. The results show that the metal–insulator transition (MIT) temperature of VO2 thin films can be increased up to 14 K by applying a cathode bias voltage, compared to deposition conditions without any bias. The decrease in the transition efficiency and increase in the transition temperature are attributed to the enlarged grain size, increased defects, and the residual stress in the VO2 thin films induced by biasing. The optical transmittance measurements for different thickness films indicate an attenuation coefficient of 3.1 × 107 m−1 at 2000 nm or an extinction coefficient of 4.9 in the metal phase. The optical transmittance vs wavelength characteristics point to an indirect bandgap of 0.6 ± 0.5 eV and significant scattering in the bulk and/or at the interface.

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VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

Cited by 24 publications

References 23 publications

Infrared Transmission Characteristics of Phase Transitioning VO2 on Various Substrates

Infrared Transmission Characteristics of Phase Transitioning VO2 on Various Substrates

Development of VO₂‐Nanoparticle‐Based Metal–Insulator Transition Electronic Ink

The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior

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VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

Cited by 24 publications

References 23 publications

Infrared Transmission Characteristics of Phase Transitioning VO2 on Various Substrates

Infrared Transmission Characteristics of Phase Transitioning VO2 on Various Substrates

Development of VO2‐Nanoparticle‐Based Metal–Insulator Transition Electronic Ink

The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior

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Development of VO₂‐Nanoparticle‐Based Metal–Insulator Transition Electronic Ink