Voltage-to-frequency converters based on current instabilities in semiconductors

Abstract

This paper describes the possibility of using Gunn effect and oscillistor effect for the development voltage-tofrequency converters (VFC). VFC based on Gunn effect has the sensitivity (10-15) MHz/V. Sensitivity of VFC based on oscillistor effect depends on temperature and reached (20-25) kHz/V at temperature 77K and 120 kHz/V at 4,2K. The experimental results are presented in the paper.