Volumetric Optical Recording with Void Marks Using an All-Semiconductor Picosecond Laser

Tashiro, Shiori; Yamatsu, Hisayuki; Takemoto, Y.; Fujita, Goro; Miura, Takahiro; Iwamura, Takashi; Uchiyama, Hiroshi; Yun, KyungSung

doi:10.7567/jjap.50.09mf03

Cited by 1 publication

(1 citation statement)

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“…To store data three dimensionally, multiphoton processes, such as two photon absorption, must be induced using high peak power optical pulses. A GaN-based SOA incorporating MLLD would be highly suitable as a practical pulse source, and in fact, such applications have already been demonstrated [45,46].…”

Section: Optical Storagementioning

confidence: 99%

Gallium Nitride-based Semiconductor Optical Amplifiers

Koda¹,

Watanabe²,

Kono³

2015

Some Advanced Functionalities of Optical Amplifiers

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GaN-based material can potentially cover a wide spectral emission ranμe, and laser diodes emittinμ in the UV, violet, blue, μreen, and red wavelenμths have already been demonstrated and/or commercialized. GaN-based semiconductor optical ampliλiers SOAs have the ability to boost the output power oλ laser diodes and thus are candidates λor a broad variety oλ potential uses. Applications that utilize short wavelenμth, ultraλast pulses, includinμ microprocessinμ, orthoptics, and next-μeneration optical storaμe can most beneλit λrom GaN-based SOAs since current ultraλast pulse sources rely on larμe, expensive solid-state lasers. GaN-based SOAs can μenerate hiμh-enerμy, hiμh peak power optical pulses when used in conjunction with mode-locked laser diodes. In this chapter, the basic characteristics oλ these devices are discussed, concentratinμ on pulse ampliλication. Early experimental work, as well as the latest results, is presented, and improvements in the SOA desiμn allowinμ the μeneration oλ hiμher optical pulse enerμy are discussed.

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Section: Optical Storagementioning

confidence: 99%