Vortex-dynamics-mediated low-field magnetization switching in an exchange-coupled system

Zhou, Weinan; Seki, Takeshi; Arai, Hiroko; Imamura, Hiroshi; Takanashi, Kōki

doi:10.1103/physrevb.94.220401

Cited by 11 publications

(5 citation statements)

References 23 publications

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“…As the magnetization is constrained to lie in the thin film plane by magnetocrystalline anisotropy energy, vortex ferromagnetic domain configurations are found in the soft magnetic layer for both double-layered and core-shelled structures. The predicted vortex structure is experimentally observed in a similar double-layered L1 0 −FePt/permalloy structure by Zhou et al [28]. The vector plots on the right of Figure 3 show the magnetization distributions in the xy plane and the xz plane during the switching process.…”

Section: Simulation Resultssupporting

confidence: 73%

Lattice Phase Field Model for Nanomaterials

Liang

2021

Materials

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The lattice phase field model is developed to simulate microstructures of nanoscale materials. The grid spacing in simulation is rescaled and restricted to the lattice parameter of real materials. Two possible approaches are used to solve the phase field equations at the length scale of lattice parameter. Examples for lattice phase field modeling of complex nanostructures are presented to demonstrate the potential and capability of this model, including ferroelectric superlattice structure, ferromagnetic composites, and the grain growth process under stress. Advantages, disadvantages, and future directions with this phase field model are discussed briefly.

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Section: Simulation Resultssupporting

confidence: 73%

Lattice Phase Field Model for Nanomaterials

Liang

2021

Materials

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“…Perpendicular magnetization is essential for a wide range of technologies including spin transfer torque (STT) magnetic random access memory (MRAM), spin-orbit torque MRAM, ultrahigh-density magnetic recording devices, Racetrack memory, etc. [1][2][3][4][5][6][7][8] A ferromagnetic (FM) layer can be perpendicularly magnetized when it possesses a perpendicular magnetic anisotropy (PMA) overcoming its shape anisotropy. In general, PMA originates from interface and/or bulk magnetic anisotropy.…”

Section: Introductionmentioning

confidence: 99%

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]₂ multilayers

Huang¹,

Wang²,

Yuan³

et al. 2022

Chinese Phys. B

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The realization of perpendicular magnetization and perpendicular exchange bias (PEB) in magnetic multilayers is important for the spintronic applications. NiO(t)/[Ni(4 nm)/Pt(1 nm)]2 multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO3 (001) substrates. Perpendicular magnetization can be achieved when t < 25 nm. Perpendicular magnetization originates from strong perpendicular magnetic anisotropy (PMA), mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers. The PMA energy constant decreases monotonically with increasing t, due to the weakening of Ni (001) orientation and a little degradation of the Ni–Pt interface. Furthermore, significant PEB can be observed though NiO layer has spin compensated (001) crystalline plane. The PEB field increases monotonically with increasing t, which is considered to result from the thickness dependent anisotropy of the NiO layer.

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“…A ferromagnetic layer exhibiting room-temperature perpendicular magnetization is an important building block for the development of various spintronic applications [1][2][3][4][5][6][7][8][9] such as ultrahigh-density magnetic recording devices, magnetic random access memories, and three-terminal spintronic devices. The perpendicularly magnetized state at zero external magnetic field is achieved when a ferromagnetic layer possesses a magnetic anisotropy field in the normal direction to the film plane larger than the demagnetizing field.…”

Section: Introductionmentioning

confidence: 99%

Perpendicularly magnetized Ni/Pt (001) epitaxial superlattice

Seki

Tsujikawa

Ito

et al. 2020

Phys. Rev. Materials

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A perpendicularly magnetized ferromagnetic layer is an important building block for recent/future highdensity spintronic memory applications. This paper reports the fabrication of perpendicularly magnetized Ni/Pt superlattices and the characterization of their structures and magnetic properties. The optimization of film growth conditions allowed us to grow epitaxial Ni/Pt (001) superlattices on SrTiO 3 (001) single-crystal substrates. We investigated their structural parameters and magnetic properties as a function of the Ni layer thickness and obtained a high uniaxial magnetic anisotropy energy of 1.9 × 10 6 erg/cm 3 for a [Ni (4.0 nm)/Pt (1.0 nm)] superlattice. In order to elucidate the detailed mechanism on perpendicular magnetic anisotropy for the Ni/Pt (001) superlattices, the experimental results were compared with the first-principles calculations. It has been found that the strain effect is a prime source of the emergence of perpendicular magnetic anisotropy.

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Vortex-dynamics-mediated low-field magnetization switching in an exchange-coupled system

Cited by 11 publications

References 23 publications

Lattice Phase Field Model for Nanomaterials

Lattice Phase Field Model for Nanomaterials

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]₂ multilayers

Perpendicularly magnetized Ni/Pt (001) epitaxial superlattice

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Vortex-dynamics-mediated low-field magnetization switching in an exchange-coupled system

Cited by 11 publications

References 23 publications

Lattice Phase Field Model for Nanomaterials

Lattice Phase Field Model for Nanomaterials

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

Perpendicularly magnetized Ni/Pt (001) epitaxial superlattice

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Product

Resources

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Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]₂ multilayers