VSPIN: a new model relying on the vectorial description of the laser field for predicting the polarization dynamics of spin-injected V(e)CSELs

Alouini, Mehdi; Frougier, Julien; Joly, Alexandre; Baili, Ghaya; Dolfi, Daniel; George, Jean-Marie

doi:10.1364/oe.26.006739

Cited by 19 publications

(13 citation statements)

References 37 publications

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“…With complementary properties to better-studied spin-VCSELs, such spin-VECSELs could offer higher power and reduced noise. Recent progress in modeling VECSELs using a vectorial model [58] could provide important guidance how the design of optical anisotropies enables an improved polarization dynamics, reflecting their behavior as overdamped harmonic oscillators.…”

Section: Discussionmentioning

confidence: 99%

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Spin-lasers: spintronics beyond magnetoresistance

Žutić

Lindemann

et al. 2020

Solid State Communications

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Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize roomtemperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics.

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Section: Discussionmentioning

confidence: 99%

“…2 and 3), the most common implementations of spin-lasers on which we focus here. External-cavity lasers (VECSELs) [58] and quantum cascade lasers [59] correspond to an overdamped oscillator and thus have no significant resonant behavior.…”

Section: Small Signal Analysismentioning

confidence: 99%

Spin-lasers: spintronics beyond magnetoresistance

Žutić

Lindemann

et al. 2020

Solid State Communications

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“…We see that using quite large value of P s , we are able to almost compensate the effects of linear optical anisotropies. 11,16 Polarization of emitted field is very close to perfectly circular one, which can be deduced from the values of the Stokes vector describing polarization state of emitted light.…”

Section: Electromagnetic-field Distribution Calculationmentioning

confidence: 98%

“…In the next step, we solve Eqs. 14, (15) and (16) to obtain emitted amplitudes A (0) u and A (N +1) d…”

Section: Propagation In Optical Cavity Extraction Of Laser Eigenmodesmentioning

confidence: 99%

“…Qualitatively correct analysis of spin-laser eigenmodes in the presence of optical anisotropies was recently performed using 2 × 2 Jones matrices revealing for example possible compensation of linear anisotropies using spin-injection. 16 However, such approaches operate with effective quantities distributed through entire laser structure, which is not practical for design of future spin-lasers. Sophisticated layer-by-layer treatment of spinlasers [spin-V(E)CSELs especially] based on scattering matrices was currently proposed by Fördös et al 17,18 Such approach allows to extract and study laser eigenmodes of arbitrary spin-V(E)CSEL with localized linear birefringence and linear dichroism and consequently allows possible design of future spin-lasers.…”

Section: Introductionmentioning

confidence: 99%

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Dynamical and anisotropic properties of spin-VCSELs

Drong

Fördös

Jaffrès

et al. 2019

Quantum Sensing and Nano Electronics and Photonics XVI

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Spin-polarized lasers such as spin-polarized vertical-cavity surface-emitting laser (spin-VCSELs) are prospective devices in which the radiative recombination of spin-polarized carriers results in an emission of circularly-polarized photons. Nevertheless, additional linear in-plane anisotropies in the cavity generally lead in preferential linearlypolarized laser emission and to possible coupling between modes. Optimization of room-temperature spin-VCSELs thus relies on a proper modeling method and on a good understanding of these anisotropies that may reveal (i) a local linear birefringence due to strain fields at the surface or (ii) a birefringence in quantum wells (QWs) due to phase-amplitude coupling originating from the reduction of the biaxial D 2d to the C 2v symmetry group at the III-V ternary semiconductor interfaces. We present a novel method for the modeling of steady-state and dynamical properties of generally anisotropic multilayer semiconductor lasers containing multiple QWs active region. In order to solve the dynamical properties of spin-VCSELs, we combine here optical Bloch equations for a 4-level system with the scattering-matrix formalism, which treats VCSELs as a multilayer structure containing classical active dipole layers [T. Fördös et al., Phys. Rev. A 96, 043828 (2017)]. The method is then demonstrated on real semiconductor laser structures with InGaAs/GaAsP quantum wells. It is used for calculation of the laser resonance condition, the polarization properties of eigenmodes, the electromagnetic-field distribution inside the laser cavity, and time-dependent properties of the emitted light.

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Ultrafast spin-lasers

Lindemann

Pusch

et al. 2019

Nature

186

134

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The appeal of lasers can be attributed to both their ubiquitous applications and their role as model systems for elucidating nonequilibrium and cooperative phenomena [1]. Introducing novel concepts in lasers thus has a potential for both applied and fundamental implications [2]. Here we experimentally demonstrate that the coupling between carrier spin and light polarization in common semiconductor lasers can enable room-temperature modulation frequencies above 200 GHz, exceeding by nearly an order of magnitude the best conventional semiconductor lasers. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both commonly viewed as detrimental in spintronics [3] and conventional lasers [4]. Our results overcome the key speed limitations of conventional directly modulated lasers and offer a prospect for the next generation of low-energy ultrafast optical communication.The global internet traffic will continue its dramatic increase in the near future [5]. Short-range and energy-efficient optical communication networks provide most of the communication bandwidth to secure the digital revolution. Key devices for high-speed optical interconnects, in particular in server farms, are current-driven intensity-modulated vertical-cavity surface-emitting lasers (VCSELs) [4]. Analogous to a driven damped harmonic oscillator, modulated lasers have a resonance frequency f R for the relaxation oscillations of the light intensity [6]. For higher frequencies the response decays and reaches half of its low-frequency value at f 3dB ≈ 1 + √ 2f R , which quantifies the usable frequency range [4]. In conventional VCSELs the modulation bandwidth is limited by the dynamics of the coupled carrier-photon system and parasitic as well as thermal effects. The current record is f 3dB = 34 GHz [7]. Common approaches to enhance the bandwidth rely on the expression f R = v g aS/τ p /(2π), where v g is the group velocity, a the differential gain, S the photon density, and τ p the * markus.lindemann@rub.de † nils.gerhardt@rub.de arXiv:1807.02820v1 [cond-mat.mes-hall]

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VSPIN: a new model relying on the vectorial description of the laser field for predicting the polarization dynamics of spin-injected V(e)CSELs

Cited by 19 publications

References 37 publications

Spin-lasers: spintronics beyond magnetoresistance

Spin-lasers: spintronics beyond magnetoresistance

Dynamical and anisotropic properties of spin-VCSELs

Ultrafast spin-lasers

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