W-CDMA SiGe TX-IC with high dynamic range and high power control accuracy

Joba, Hiroyuki; Takahashi, Yoshiaki; Matsunami, Yukitoshi; Itoh, Kenji; Shinjo, Shintaro; Suematsu, Noriharu; Malhi, D.S.; Wang, D.; Schelkle, K.; Bacon, P.

doi:10.1109/rfic.2002.1011503

Cited by 14 publications

(3 citation statements)

References 3 publications

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“…The IF VGA is a five-stage cascaded differential amplifier with more than 80 dB of linear gain-control range [6]. Linear-in-dB gain control allows low current digital-to-analog converters (DACs) to use the full available gain range.…”

Section: If Vgamentioning

confidence: 99%

SiGe W-CDMA transmitter for mobile terminal application

Malhi¹,

Larson²,

Wang³

et al. 2003

IEEE J. Solid-State Circuits

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This paper presents the design considerations and experimental results of a transmitter integrated circuit (IC) for wide-band code division multiple access (W-CDMA) mobile terminal application based on a superheterodyne architecture. Implemented by utilizing IBM's 0.5-m SiGe BiCMOS technology, the transmitter IC consumes approximately 270 mW with a 3.0-V power supply. The radio-frequency IC features a third-order output intercept point (OIP3) of +25.0 dBm, a 95-dB dynamic range, and 6.3% error vector magnitude. Index Terms-Automatic gain control, baluns, error vector magnitude, wideband code division multiple access (W-CDMA).

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Section: If Vgamentioning

confidence: 99%

SiGe W-CDMA transmitter for mobile terminal application

Malhi¹,

Larson²,

Wang³

et al. 2003

IEEE J. Solid-State Circuits

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“…However, off-chip surface acoustic wave (SAW) filters are required for both image rejection, as well as removing spurious harmonics at the output. Furthermore, the two sets of mixers and respective LO synthesizers lead to complex and area/power inefficient designs [2]- [5]. On the other hand, direct conversion transmitters do not require any image reject filter, but they suffer from LO leakage due to dc offset and I/Q mismatch, thus degrading the signal spectrum and the error vector magnitude (EVM) [6], [7].…”

Section: Introductionmentioning

confidence: 99%

A Linear $\Sigma$–$\Delta$ Digital IF to RF DAC Transmitter With Embedded Mixer

Taleie

Copani

Bakkaloglu

et al. 2008

IEEE Trans. Microwave Theory Techn.

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A noise-shaped direct digital IF to RF (DIF2RF) DAC with embedded upconverter mixer is presented. The digital IF signal is noise shaped by a bandpass 6-1 modulator with 1-bit IF output followed by a semidigital finite impulse response (FIR) filter. The current mode FIR filter combines scaled values of the local oscillator (LO) signal for performing reconstruction filtering and upconversion in a single module. The DIF2RF design modulates the digital IF signal with a digital LO signal. This topology eliminates the transconductance nonlinearity of conventional mixers and is inherently linear due to single-bit digital IF input. The presented architecture reduces clock jitter sensitivity of 1-bit DACs by masking IF clock transitions with LO signals. A prototype of the DIF2RF DAC is designed and fabricated in a five-layer metal 0.25-m digital CMOS process. The architecture can be used in low-power software-defined digital-IF transmitters. The DIF2RF DAC consumes 49 mA from a 2.5-V supply, achieving 64.7-dBc third-order intermodulation at 1.03 GHz with a spurious-free dynamic range of 72 dB in a 15-MHz bandwidth.

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“…As a result, the optimum integrated circuit technology in temis of optimum devices, integration level and cost is still ongoing and constantly evolving One of the first highly integrated W-CDMA transceiver solutions is a dual-chip IF receiver/transmitter published previously by the authors [33], [34]. Other BiCMOS [36], and a highly-integrated tri-bandiquadmode SiGe BiCMOS receiver, implemented in a 0.5-pm SiGe BiCMOS process [37]. One of the first fully-integrated superhet transmitters with RF and 380 MHz IF section, implemented in a O.3-pm SiGe BiCMOS process has been published recently, [;SI.…”

Section: Fig 5 Infineon's Chip S-goldmentioning

confidence: 99%

Integrated baseband and RF circuits for 2.5/3G mobile radio terminals

Stelzer

Thomann²,

Huemer³

et al.

17th International Conference on Applied Electromagnetics and Communications, 2003. ICECom 2003.

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The Global System for Mobile Communication (GSM) has set out to conquer the world. The power of this technology has dramatically changed the way of life in hiunan sociefy. Thi.s paper gives un overview ofpresently existing digital cellular standard.7 (2G) and their convergence (2.5G) toword.s third-generation (3G) systems like !lie Universal Mobile Telephone System (UMTS). System requirements of the neiv generation of mobile phones are discussed in terms of baseband signal processing power and the inipact on semiconductor technolog?. A highly integrated baseband processor is presented. In the second part of the paper challenges of the RF transceiver are lreated by the jiilly-inlegrated, single-chip, interniediate f'eqirency (IF) transceiver "Sushi Compact " with on-chip synthesizer. a vector-modiila!or/divider structure for receiver local oscillator (LO) generation. and by introducing a jirlly-integrated direc! conver.siun transceiver SMARTiU. Tlie transceivers are intended for 3G Wide-Band Code Division Multiple Access (W-CDMA) mobiles and haw been impleinented in standard. high frequency, Si-BiCMOS processes. Bath transceivers coniply wilh Association of Radio Industries and Businesses (ARIB) WCDMA and UMTS stundards.

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W-CDMA SiGe TX-IC with high dynamic range and high power control accuracy

Cited by 14 publications

References 3 publications

SiGe W-CDMA transmitter for mobile terminal application

SiGe W-CDMA transmitter for mobile terminal application

A Linear $\Sigma$–$\Delta$ Digital IF to RF DAC Transmitter With Embedded Mixer

Integrated baseband and RF circuits for 2.5/3G mobile radio terminals

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