Waveguide AlInAs/GaAlInAs avalanche photodiode witha gain-bandwidthproduct over 160 GHz

Cohen-Jonathan, C.; Giraudet, L.; Bonzo, A.; Praseuth, J.P.

doi:10.1049/el:19970988

Cited by 40 publications

(10 citation statements)

References 3 publications

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“…The waveguide superlattice APD was first reported in 1994 [46]. Afterwards, a waveguide superlattice APD with a 0.3-mthick photoabsorption layer reached 72%-efficiency (0.9-A/W responsivity) and 3.2-multiplication factor at 20-GHz at 1.55-m wavelength [47]. This indicates a 47-GHz bandwidthefficiency product.…”

Section: E Other Pd'smentioning

confidence: 90%

Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

323

127

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The two main trends in the progress of ultrawideband/high-frequency photodetectors (PD's), improving the bandwidth-efficiency product and obtaining a high saturation current, are reviewed. With respect to achieving large bandwidthefficiency, the limiting factors and potentials of edge-coupled (waveguide, waveguide-fed, traveling-wave, periodic-travelingwave), resonant-cavity, and refracting-facet photodiodes, as well as the avalanche photodiode are discussed. Regarding high-saturation current, the author estimated how much the space-charge effect limits the saturation current and two ways to reduce the space-charge effect are outlined. One way is to distribute the photocarriers along the edge-coupled PD's and the other is to increase the carrier velocity using a uni-traveling carrier structure. The waveguide-photodiode-based technologies that we have developed are also presented; namely the design and fabrication of a 100-GHz waveguide photodiode (WGPD), uni-traveling carrier WGPD, 60-GHz packaging, and a 20-GHz large-core WGPD for the planar lightwave circuit integration. A 50-Gb/s receiver opto-electronic integrated circuit technology based on the WGPD is also presented.

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Section: E Other Pd'smentioning

confidence: 90%

Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

323

127

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“…Input is achieved by direct coupling to the edge of the photodiode or evanescently using tapered couplers or optical matching layers. In order to achieve the bandwidths required for future high-bit-rate fiber optic systems, SACM APDs have been incorporated into edge-coupled [109]- [114] and evanescently coupled [115], [116] waveguide photodiodes. Nakata et al [111] have reported an edge-coupled In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As APD (Fig.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Telecommunications Avalanche Photodiodes

Campbell

2007

J. Lightwave Technol.

219

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For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is frequently the photodetector of choice owing to its internal gain, which provides a sensitivity margin relative to PIN photodiodes. APDs can achieve 5-10-dB better sensitivity than PINs, provided that the multiplication noise is low and the gain-bandwidth product is sufficiently high. In the past decade, the performance of APDs for optical fiber communication systems has improved as a result of improvements in materials and the development of advanced device structures. This paper presents a brief review of APD fundamentals and describes some of the significant advances.

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“…Measured Fitted I total = J sidewall *π π π π*d + J bulk *π π π π*d 2 /4 J sidewall = 0.19nA/µ µ µ µm J bulk = 0.023nA/µ µ µ µm The separate absorption, charge, and multiplication (SACM) structure that was utilized for the large-area APDs and arrays is shown in Figure 6. With proper design this structure exhibits low dark current, low multiplication noise, and high speed [21,[37][38][39][40]. The typical photoresponse and dark current curves of a 500µm-diameter APD are shown in Figure 7.…”

Section: Large-area Avalanche Photodiodesmentioning

confidence: 99%