2023
DOI: 10.3390/photonics10070750
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Waveguide-Integrated Ge/Si Avalanche Photodiode with Vertical Multiplication Region for 1310 nm Detection

Abstract: Ge/Si separate absorption, charge, and multiplication avalanche photodiodes (SACM APDs) coupled with waveguides have shown significant potential as high-sensitivity, low-noise, and high-speed photodetectors for optical communications. In this study, we present a waveguide-integrated Ge/Si SACM APD fabricated on an eight-inch silicon photonics platform. The device exhibits a primary responsivity of 0.68 A/W at the unit gain voltage of 6 V for the O-band (1310 nm) wavelength, with a 10 μm-long and 1 μm-wide Ge l… Show more

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Cited by 3 publications
(1 citation statement)
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“…The photocurrent was experimental at the bias voltage ranging from 0 to −21 V. The measured photocurrent of the APDs is about 8.6 nA at 0 V and goes up quickly to 1.13 μA at −2.4 V with the input optical powers of −10 dBm. The germanium−silicon interface potential difference needs to be overcome [46,47] . The photodetector increases with the voltage goes up, mainly because of the more carrier collection efficiency and avalanche multiplication.…”
Section: Static Photoresponse Included I−v Responsivity Gainmentioning
confidence: 99%
“…The photocurrent was experimental at the bias voltage ranging from 0 to −21 V. The measured photocurrent of the APDs is about 8.6 nA at 0 V and goes up quickly to 1.13 μA at −2.4 V with the input optical powers of −10 dBm. The germanium−silicon interface potential difference needs to be overcome [46,47] . The photodetector increases with the voltage goes up, mainly because of the more carrier collection efficiency and avalanche multiplication.…”
Section: Static Photoresponse Included I−v Responsivity Gainmentioning
confidence: 99%