Wavelength control from 1.25 to 1.4 μm in InxGa1−xAs quantum dot structures grown by metal organic chemical vapor deposition

Passaseo, A.; Maruccio, Giuseppe; Vittorio, Massimo De; Rinaldi, R.; Cingolani, R.; Lomascolo, M.

doi:10.1063/1.1352698

Cited by 49 publications

(25 citation statements)

References 14 publications

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“…[27][28][29][30][31][32] Because Sb is known to act as a surfactant, a GaSbAs SRL may act to suppress defect generation and enhance radiative recombination. 33 Furthermore the GaAsSb capping offers an additional degree of freedom as emission can come from type II band alignment.…”

Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling microscopy shows strong Sb and In segregation which extends through the GaAsSb and into the GaAs matrix. We compare various existing models used to describe the exchange of group III and V atoms in semiconductors and conclude that commonly used methods that only consider segregation between two adjacent monolayers are insufficient to describe the experimental observations. We show that a three-layer model originally proposed for the SiGe system ͓D. J. Godbey and M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 ͑1997͔͒ is instead capable of correctly describing the extended diffusion of both In and Sb atoms. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain-reduction layer.

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Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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“…InGaAs alloys with low indium composition have been investigated extensively to reduce the strain imposed on the QD by the surrounding material and minimize interdiffusion of indium from the QD [6,7]. We have compared the standard GaAs cap to In 0.1 Ga 0.9 As and GaAs 0.9 Sb 0.1 .…”

Section: Methodsmentioning

confidence: 99%

The impact of growth parameters on the formation of InAs quantum dots on GaAs(100) by MOCVD

Cederberg

Kaatz

Biefeld

2004

Journal of Crystal Growth

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“…2.1 Quantum dot samples Indium gallium arsenide quantum dots were fabricated by MOCVD on n + GaAs(001) substrates [17]. Following the growth, at a temperature of 580 C, of a 200 nm GaAs buffer layer and a 5 nm GaAs buffer layer at a slower growth rate, 5 monolayers of InGaAs were deposited, to form a layer of quantum dots.…”

Section: Methodsmentioning

confidence: 99%

Optical and Electrical Injection of Single Quantum Dots: Beyond the Inhomogeneous Broadening Issues

Cingolani

Rinaldi

2002

phys. stat. sol. (b)

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Dedicated to Professor Dr. Roland Zimmermann on the occasion of his 60th birthday Inhomogeneous broadening is a long standing issue in the physics of nanostructures, in that it prevents the detailed assessment of their electronic and optical properties, and limits the performances of nanostructure based devices. Advances in scanning probe spectroscopies have recently permitted to overcome this problem, thus opening the way to a detailed understanding of the single nanostructure properties, by virtue of their unsurpassed capability to inject carriers or photons at local scale. In particular, luminescence spectroscopy and current-voltage spectroscopy following highly localized carrier injection by a scanning tunneling microscope into a single quantum dot (QD), are the methods of choice to overcome the inhomogeneous broadening effects due to size and compositional non-uniformity. In this way one can map the eigenstates of a single dot, elucidate the relationships between carrier injection, capture and recombination, investigate the dynamics of single-dot filling, the formation of excitons and charged excitons, the occurrence of dot-dot interactions leading to molecular states, and the diffusion of charges into neighboring dots in a grand ensemble. IntroductionThe optical properties of single, isolated InGaAs self-organized QDs, have been intensively investigated in recent years. The characteristic sharp narrow lines of single-dot spectra have been identified and associated with the population of the atomic-like energy level scheme of a single, isolated QD [1-3]. However, the complexities of the ensemble QD system, such as variations in dot size, shape, composition and nearest-neighbor distance [4] together with the complex energy relaxation processes [5], inter-dot carrier and excitation transfer [6], make the prediction of the optical properties quite difficult. Hence, a study of the QD luminescence following highly localized carrier injection into the QD ensemble by a scanning tunneling microscope, allows the relationship between carrier density, energy and subsequent QD capture to be examined, beyond the inhomogeneous broadening issues.Scanning tunneling induced light emission has been reported by several groups ([7, 8] and references therein). In the case of semiconductor systems, the recombination of minority carriers injected by a STM tip and the observation of luminescence from semiconductor quantum wells [10-12], quantum wires [13], quantum dots [14] and surfaces 2 ) have been reported.

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Wavelength control from 1.25 to 1.4 μm in InxGa1−xAs quantum dot structures grown by metal organic chemical vapor deposition

Cited by 49 publications

References 14 publications

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

The impact of growth parameters on the formation of InAs quantum dots on GaAs(100) by MOCVD

Optical and Electrical Injection of Single Quantum Dots: Beyond the Inhomogeneous Broadening Issues

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