Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti:sapphire laser

Abstract

We experimentally reveal the pump-induced loss in a Ti:sapphire laser crystal with 451-nm indium gallium nitride (InGaN) laser diode pumping and show that 478-nm pumping can reduce such loss. The influence of the pump-induced loss at 451-nm pumping is significant even for a crystal that exhibits higher effective figure-of-merit and excellent laser performance at 520-nm pumping. We demonstrate the power scaling of a Ti:sapphire laser by combining 478- and 520-nm InGaN laser diodes and obtain CW output power of 593 mW.

Direct diode-pumped Kerr Lens 13 fs Ti:sapphire ultrafast oscillator using a single blue laser diode

“…A long-term degradation in the output power from DDPTS oscillators has been reported by several groups [5,12]. However, we have never seen this effect in our work.…”

Influence of pump beam shaping and noise on performance of a direct diode-pumped ultrafast Ti:sapphire laser

“…However, overdriving of these BA-DLs reduces their lifetime. Although the blue (450-472 nm) BA-DLs can give up to 5 W per emitter, pump-induced losses have often been observed when these BA-DLs were used for pumping [15,24]. Sugiyama et al [20].…”

Estimation of Crystallite Size, Density, and Compositional of the Ti: Al2O3 Single Crystal

“…Titanium-doped sapphire (Ti: Al2O3) is an excellent laser material (Nehari et al, 2011;Sawada et al, 2017). It is the most widely used crystal for wavelength-tunable laser (Panahi et al, 2015;Wu et al, 2020), and it is a leading material in the field of femtosecond pulse lasers (Kozlov & Samartsev, 2013).…”

“…It is the most widely used crystal for wavelength-tunable laser (Panahi et al, 2015;Wu et al, 2020), and it is a leading material in the field of femtosecond pulse lasers (Kozlov & Samartsev, 2013). The Ti: Al2O3 single crystal with high quality and uniform dopant distribution can be produced as a highpower tunable laser with a range of wavelengths around 600nm to 1100nm (Raeder et al, 2020;Sawada et al, 2017;Zong et al, 2019). A high-quality crystal is required for a tunable solid-state laser.…”