Abstract:Anisotropic negative magnetoresistance (MR) parallel and perpendicular to the wires in the regime of quantum interference of hole gas has been investigated in self-organized In 0.2 Ga 0.8 As quantum wires (QWRs) grown on GaAs (221)A substrates by MBE and separated from p-type Si-doped Al 0.35 Ga 0.75 As by an undoped spacer layer of it (thickness L s ) in order to address issues concerning the dimensionality in weak localization (WL) as well as spin-orbit (SO) interaction. For L s = 3 nm, the best fits of the … Show more
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