Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Ioannou‐Sougleridis, V.; Dimitrakis, P.; Vamvakas, V. Em.; Normand, P.; Bonafos, Caroline; Schamm, S.; Cherkashin, Nikolay; Assayag, Gérard; Perego, Michele; Fanciulli, M.

doi:10.1063/1.2752769

Cited by 9 publications

(5 citation statements)

References 11 publications

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“…The 10 years extrapolated memory window at room temperature is 1.7 V and 2.7 V for the Si and N-implanted samples respectively. The increased retention loss rate of this study as compared to previous [2] is attributed to the thinner initial ON structures and the increased ion implantation induced damage of the tunnel oxide.…”

Section: Resultscontrasting

confidence: 49%

“…An alternative method to accomplish significant advances in device performance is via low-energy silicon ion implantation into oxide nitride stacks followed by a low thermal budget wet-oxidation [2]. In addition, it has been shown that nitrogen low-energy implantation can also be utilized through a similar method to fabricate reliable modified ONO stacks [3].…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependent retention characteristics of ion-beam modified SONOS memories

Simatos

Dimitrakis

Normand

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Resultscontrasting

confidence: 49%

Section: Introductionmentioning

confidence: 99%

Temperature dependent retention characteristics of ion-beam modified SONOS memories

Simatos

Dimitrakis

Normand

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…High temperature annealing in inert ambient of the silicon implanted SiO 2 /Si 3 N 4 stacks result to the formation of a Si nanoparticle band (NP) within the nitride layer [5]. In contrast wet oxidation at a reduced temperature of the implanted stack forms a thick control oxide layer [6]. This work will present the bas electrical characteristics of the resulting stac attention to their memory properties.…”

Section: Introductionmentioning

confidence: 97%

Modifications of silicon nitride materials for SONOS memories

Ioannou‐Sougleridis¹,

Dimitrakis²,

Normand³

et al. 2013

CAS 2013 (International Semiconductor Conference)

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In this work we review the development of ion beam modified silicon nitride charge trap memories. Silicon low energy (typically ~1 keV) ion implantation into silicon oxide/nitride dielectric stacks may lead to two different memory structures depending on the post implantation processing steps. Annealing at 950 o C for 30 min in inert ambient of the implanted oxide/nitride stacks leads to the formation of a silicon nanoparticle band into the silicon nitride. To be functional such a structure required the subsequent deposition of a control dielectric layer. Alternatively wet oxidation at 850 o C for 15 min of the same dielectric stacks leads to the formation of a thick top silicon oxide layer. Although both structures can inject and trap electrons and holes within the nitride layer, the latter ones have an enhanced ability to retain the trapped charge, fulfilling thus the 10 years retention requirement. This property is attributed to the modification of the silicon nitride layer deep traps under the influence of the ion implantation and wet oxidation process steps. Furthermore, comparison between low-thermal budget wet oxidized silicon and inert ion (Ar, N) implanted oxide/nitride stacks shows that the formation of the top oxide depends strongly upon the implanted ions. These comparisons also indicated that nitrogen implanted oxide-nitride stacks shows a similar ability to retain the trapped charge. The above results demonstrate that low-energy ion implantation is an effective and versatile technique for the synthesis of high performance charge trapping memories.

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“…Typical LE-IBS achievements are the formation of Si and/or Ge ncs within SiO 2 [5][6][7][8][9], Si 3 N 4 [10,11] and Al 2 O 3 [12]. In addition, LE-IBS has been successfully implemented for the low thermal budget production of the blocking oxide of silicon oxidenitride-oxide silicon (SONOS)-type memory structures by wet oxidation of Si-implanted Si 3 N 4 materials [13].…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent low electric field charging of Si nanocrystals embedded within oxide–nitride–oxide dielectric stacks

Νικολάου¹,

Dimitrakis²,

Normand³

et al. 2009

Nanotechnology

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In this work we examine the current peaks and the negative differential resistance that appear in the low electric field regime of oxide-nitride-oxide structures with a two-dimensional band of silicon nanocrystals embedded in a nitride layer. The silicon nanocrystals were synthesized by low energy ion implantation (1 keV, 1.5 x 10(16) Si(+) cm(-2)) and subsequent thermal annealing (950 degrees C, 30 min). Electrical examination was performed at temperatures from 20 to 100 degrees C using constant voltage ramp-rate current measurements. This approach enables us to determine the origin of the observed current peaks as well as to extract the trapping location of the injected carriers within the dielectric stack. The results confirm that the carriers are trapped within the Si nanocrystal band, verifying that this region corresponds to energy minima of the dielectric stack.

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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Abstract: To cite this version:V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks.

Cited by 9 publications

References 11 publications

Temperature dependent retention characteristics of ion-beam modified SONOS memories

Temperature dependent retention characteristics of ion-beam modified SONOS memories

Modifications of silicon nitride materials for SONOS memories

Temperature-dependent low electric field charging of Si nanocrystals embedded within oxide–nitride–oxide dielectric stacks

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