Wide bandgap semiconductor devices and MMICs for RF power applications

Palmour, John W.; Sheppard, S.T.; Smith, R.P.; Allen, Scott T.; Pribble, W.L.; Smith, T.J.; Ring, Z.; Sumakeris, Joseph J.; Saxler, A.; Milligan, J.W.

doi:10.1109/iedm.2001.979517

Cited by 44 publications

(13 citation statements)

References 5 publications

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“…AlGaN/GaN HEMT -band power amplifiers showed CW output power levels of 22.9 [2] and 38 W [3]. In the -band, a GaN monolithic microwave integrated circuit (MMIC) operating at 16 GHz has recently been demonstrated with the total CW output power of 24.2 W [3].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN HEMTs---operation in the K-band and above

Smorchkova¹,

Wójtowicz²,

Sandhu³

et al. 2003

IEEE Trans. Microwave Theory Techn.

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Section: Introductionmentioning

confidence: 99%

AlGaN/GaN HEMTs---operation in the K-band and above

Smorchkova¹,

Wójtowicz²,

Sandhu³

et al. 2003

IEEE Trans. Microwave Theory Techn.

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“…At V d = 25 V, the device delivered an output power of 1.48 W with a linear gain of 8.3 dB and a power-added efficiency of 25%. Figure 11 summarizes the reported output power results as a function of frequency [14][15][16][17]. Although the total number of publications at pseudo-millimeter-wave frequencies is still very small, the output power of 1.48 W obtained in this work is larger than any other power results ever reported in the frequency range higher than 20 GHz.…”

Section: Power Performancementioning

confidence: 58%

AlGaN/GaN heterojunction FETs for high‐power applications

Kuzuhara

Ando

Inoue

et al. 2003

Electron Comm Jpn Pt II

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SUMMARYGaN and its heterojunction structures are attracting considerable attention as materials for high-voltage, highfrequency power device applications. This paper gives an overview of the basic device structure, process technology, and recent device performance achieved with AlGaN/GaN heterojunction FET structures. The emphasis is on the performance of power amplifiers developed for use in cellular base station transmitters and pseudo-millimeter-wave wireless access systems. Future research topics and prospects of nitride-based transistors are also discussed.

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“…This process is a 3 metal-insulator (3MI) processes with a process design kit (PDK) available and was implemented using AWR Microwave Office CAD simulator. Capacitors, resistors and inductors are available within the design kit and all the trace layouts are implemented in microstrip technology which is compatible with existing hybrid radar modules [15]. All the active devices were designed and cleared for any design rule check (DRC) errors.…”

Section: Cad Layoutmentioning

confidence: 99%

Integrated power switches for X-Band PA

Pereira

Parker

Heimlich

et al. 2015

2015 IEEE Radar Conference (RadarCon)

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This paper reports on the development of high frequency, high efficiency integrated supply modulators for airborne and space based high power amplifier modules. The power switches within the integrated modulators were RF HEMTs optimized for power amplifier applications. The modulators were fabricated in commercial foundry GaN process and delivered 10W of output power with an efficiency of 83.5% while switching at a frequency of 100 MHz. Development of high frequency supply modulators paves the way for integration of the HPA and modulators onto the MMIC die and on-chip drain bias modulation for efficiency enhancement of the HPA.

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Wide bandgap semiconductor devices and MMICs for RF power applications

Cited by 44 publications

References 5 publications

AlGaN/GaN HEMTs---operation in the K-band and above

AlGaN/GaN HEMTs---operation in the K-band and above

AlGaN/GaN heterojunction FETs for high‐power applications

Integrated power switches for X-Band PA

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