Wide tuning-range CMOS VCO based on a tunable active inductor

Kia, Hojjat Babaei; A’ain, Abu Khari; Grout, Ian

doi:10.1080/00207217.2013.769188

Cited by 24 publications

(1 citation statement)

References 8 publications

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“…Owing to the higher phase noise performance, LC-tank VCOs with spiral inductors and varactors are extensively adopted in radio frequency circuit implementations [21]. Theoretically, the VCO tuning range is determined by the maximum to minimum capacitance ratio of the varactor [22,23].…”

Section: Literature Reviewmentioning

confidence: 99%

A Novel 65 nm Active-Inductor-Based VCO with Improved Q-Factor for 24 GHz Automotive Radar Applications

Behera

Siddique

Delwar

et al. 2022

Sensors

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The inductor was primarily developed on a low-voltage CMOS tunable active inductor (CTAI) for radar applications. Technically, the factors to be considered for VCO design are power consumption, low silicon area, high frequency with reasonable phase noise, an immense quality (Q) factor, and a large frequency tuning range (FTR). We used CMOS tunable active inductor (TAI) topology relying on cascode methodology for 24 GHz frequency operation. The newly configured TAI adopts the additive capacitor (Cad) with the cascode approach, and in the subthreshold region, one of the transistors functions as the TAI. The study, simulations, and measurements were performed using 65nm CMOS technology. The assembled circuit yields a spectrum from 21.79 to 29.92 GHz output frequency that enables sustainable platforms for K-band and Ka-band operations. The proposed design of TAI demonstrates a maximum Q-factor of 6825, and desirable phase noise variations of −112.43 and −133.27 dBc/Hz at 1 and 10 MHz offset frequencies for the VCO, respectively. Further, it includes enhanced power consumption that varies from 12.61 to 23.12 mW and a noise figure (NF) of 3.28 dB for a 24 GHz radar application under a low supply voltage of 0.9 V.

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Section: Literature Reviewmentioning

confidence: 99%

A Novel 65 nm Active-Inductor-Based VCO with Improved Q-Factor for 24 GHz Automotive Radar Applications

Behera

Siddique

Delwar

et al. 2022

Sensors

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Design of a CMOS 65‐nm inductor‐less VCO for ISM applications in the VHF band

Gaoding

Bousquet

2020

Circuit Theory & Apps

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Summary This paper presents a design of a CMOS cross‐coupled voltage‐controlled oscillator (VCO) using active inductors (AIs) for wide‐band applications and can also be applied to various wireless technologies standards. The compatibility of this design to different wireless standards highlights its potential to be implemented at the core of the communication front end in the Internet of Things (IoT). The proposed AI design employs a gyrator‐C topology as the basic structure to generate an inductance. The VCO uses a cross‐coupled oscillator structure with a pair of varactors to sweep the frequency. Two extra capacitors, between the AIs and the outputs of the VCO core tank, are employed to enhance the performance of the phase noise and make the VCO work similarly to a linear transconductance (LiT) oscillator. Both the AIs and the VCO are designed in the TSMC 65‐nm CMOS technology, and the performance is analyzed using postsimulation results, as well as through measurements. The fundamental frequency spans from 140 to 463 MHz. Thus, the relative tuning range of this design is approximately 107%. The optimal phase noise of the design is around −97 dBc/Hz at 1‐MHz offset. Furthermore, it achieves an excellent figure of merit (FOM) around −163 dBc/Hz with a direct current (DC) power consumption less than 3 mW. The proposed design shows an advantage in phase noise and power consumption in comparison with previous active inductor VCO and ring VCO designs, respectively. The final layout occupies only 0.4 × 0.62 mm2 including the pads. The proposed AI‐VCO shows a compact size, linear tuning, low power consumption, and good phase noise performance.

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Tunable active inductor based VCO and BPF in a single integrated design for wireless applications in 90 nm CMOS process

Faruqe

Lim²,

Amin³

2020

Engineering Reports

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This article proposes a tunable active inductor (AI)‐based voltage‐controlled oscillator (VCO) andbandpass filters (BPF) on a single integrated design in 90 nm CMOS process for wireless applications. By exploiting component sharing technique through single pole double throws switching method, a common AI is shared between VCO and BPFs. As the passive inductor is replaced by the AI and shared, silicon area consumption is significantly reduced. Transforming the inductor in tunable mode benefits to eliminate MOS varactors for tuning purposes; one step forward to reduce silicon area consumption. Operating as VCO, its frequency ranges from 1.93 to 6.22 GHz (tuning scope is 105%) for tuning voltage of 0.2 ∼ 1 V. The DC power consumption varies from 1.83 to 3.84 mW, and differential output power is 3.39 to − 2.99 dBm. The phase noise varies from − 81.32 to − 76.89 dBc/Hz, and the figure of merit has a value of − 148.74 dBc/Hz at 5.03 GHz frequency. While acting as BPF, two approaches of center frequency tuning are applied. The voltage tuning yields center frequency of 8.43 ∼ 7.08 GHz along with the maximum gain of 10.29 dB at 7.81 GHz. The capacitive tuning outputs frequency tuning of 7.64 ∼ 7.06 GHz. The BPF consumes DC power of 2.56 to 2.27 mW (voltage tuning) and 2.40 mW (capacitive tuning). The proposed design occupies a layout area of 1215.6 μm2. All the simulations have been performed considering parasitic elements evolved from the extraction of layout. Finally, a quantitative comparison and justification of the proposed design are made with respect to other published works.

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Wide tuning-range CMOS VCO based on a tunable active inductor

Cited by 24 publications

References 8 publications

A Novel 65 nm Active-Inductor-Based VCO with Improved Q-Factor for 24 GHz Automotive Radar Applications

A Novel 65 nm Active-Inductor-Based VCO with Improved Q-Factor for 24 GHz Automotive Radar Applications

Design of a CMOS 65‐nm inductor‐less VCO for ISM applications in the VHF band

Tunable active inductor based VCO and BPF in a single integrated design for wireless applications in 90 nm CMOS process

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