Wideband Techniques for Outphasing Power Amplifiers

Holzer, Kyle D.; Wen, Yan; Walling, Jeffrey S.

doi:10.1109/tcsi.2018.2800041

Cited by 28 publications

(11 citation statements)

References 32 publications

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“…High output power is a necessary requirement in many RF/microwave systems such as communications, radar, and electromagnetic compatibility test instruments . In the past years, the traveling‐wave tubes (TWTs) used to realize high power output amplifiers now are being replaced by solid‐state power amplifiers (SSPA).…”

Section: Introductionmentioning

confidence: 99%

“…High output power is a necessary requirement in many RF/microwave systems such as communications, radar, and electromagnetic compatibility test instruments. [1][2][3][4][5][6] In the past years, the traveling-wave tubes (TWTs) used to realize high power output amplifiers now are being replaced by solid-state power amplifiers (SSPA). Nowadays, solid-state technologies such as high electron mobility transistors (HEMTs) have more power delivery capability compared with that of other semiconductor technologies.…”

Section: Introductionmentioning

confidence: 99%

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A 200 W broadband high power amplifier using hybrid power combining network and digital level control

Alekajbaf

Masoumi

Mohammad-Taheri

et al. 2020

Int J RF Microw Comput Aided Eng

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In this article, a 2 to 6 GHz solid‐state power amplifier with 53 dBm output power has been analyzed, designed, and fabricated. To achieve a wideband high output power, we introduce a 16‐way hybrid power combiner based on microstrip planar binary and parallel structures. The simulation and measurement results of the proposed hybrid power combining network (PCN) show that the maximum power combining efficiency is around 86% with the insertion loss of around 0.6 to 1.5 dB and an isolation of 20 dB between the ports. Also, to compensate the output power variations due to the thermal and operating frequency changes across the bandwidth, a digital level control (DLC) unit utilizing an agile control algorithm is proposed which decreases the output power variations to 2% of the desired output power. A cooling heatsink fan system has been also designed in order to transfer the heat generated power to the air. The measured output power for the applied input continuous wave is higher than 52.5 dBm. In addition, the power added efficiency (PAE) is better than 15% across the wide portion of the bandwidth and the measured third‐order intermodulation is about 20 dBc (average).

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 200 W broadband high power amplifier using hybrid power combining network and digital level control

Alekajbaf

Masoumi

Mohammad-Taheri

et al. 2020

Int J RF Microw Comput Aided Eng

View full text Add to dashboard Cite

show abstract

“…Later on, great efforts had been performed to improve the outphasing PA from different aspects such as designing high‐efficiency combiners and introducing new switch‐mode PA architectures to the branch amplifiers 13‐17 . Nevertheless, there are few works proposed in the literature for multiband or wideband outphasing PAs, and existing analysis are not complete 18‐24 . This is mainly because successful implementation of Chireix outphasing requires specific impedance transformation and accurate reactance compensations that are closely related to its status at saturation and power back‐off points.…”

Section: Introductionmentioning

confidence: 99%

A high efficiency dual‐band outphasing power amplifier design

Wang

Chen

Cai

et al. 2020

Int J RF Microw Comput Aided Eng

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This article proposes a novel design methodology for dual-band outphasing power amplifiers (PAs) with back-off efficiency enhancement. While satisfying load modulation requirements of the Chireix outphasing PA, this work replaces the quarter-wavelength impedance inverter in the classical structure with a dual-band impedance inverter. In addition, two dual-band reactance compensation networks that absorb the transistor parasitic capacitance are strategically placed. This mitigates the intrinsic reactive loading problem of the outphasing PA and also reduces circuit complexity. A comprehensive theoretical formulation of the proposed design is described and verified through the implementation of a dual-band (2.6 and 3.5 GHz) PA prototype intended for LTE and 5G applications. This amplifier is built upon two 10-W GaN HEMTs, and achieves a maximum power of 44.6 and 43.5 dBm with over 71% and 64% associated drain efficiencies at 2.6 and 3.5 GHz, respectively. At the 6 dB output back-off points, corresponding efficiencies reached 58.4% and 50.1%, respectively. According to the best of authors' knowledge, this is the first dualband outphasing PA work with comparable performances to other load modulation type PA such as the Doherty.

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“…Different types of output combiners have been used in outphasing transmitters. All types can be categorized into three general classes: isolated combiners [15], [16], nonisolated combiners [17]- [23], and partially isolated combiners [24]. Isolated combiners contain resistive elements that isolate branch PA outputs from each other.…”

Section: Introductionmentioning

confidence: 99%

“…However, since these combiners introduce significant nonlinear distortion, digital predistortion techniques (DPD) are often required for these transmitters [26]- [28]. Partially isolated combiners provide a trade-off between nonlinear distortion and linearity and are capable of improving the bandwidth performance of an outphasing transmitter [24].…”

Section: Introductionmentioning

confidence: 99%

Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters

et al. 2020

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In this paper, a novel outphasing power amplifier (PA) based on class-E amplifiers with shunt capacitances and shunt filters is proposed. The new design provides high drain efficiency for both peak and back-off power levels. A mathematical model for the class-E power amplifier with shunt capacitance and shunt filter is presented. The proposed model enables derivation of load circuit parameters that provide optimum drain efficiency for the peak and back-off power levels using closed form mathematical expressions. Based on this model, an outphasing power amplifier is designed and subsequently implemented using microstrip transmission lines and a GaN HEMT devices. The fabricated power amplifier prototype is optimized for 2.14 GHz and provides drain efficiency of over 60% for back-off power levels up to 8.5 dB. The amplifier demonstrates a 44.3% drain efficiency for 64QAM OFDM modulated signal with 20 MHz bandwidth. Adjacent channel leakage ratio (ACLR) of-39.5 dB and error vector magnitude (EVM) of 0.9 % were achieved after the application of a memory polynomial linearization algorithm.

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Wideband Techniques for Outphasing Power Amplifiers

Cited by 28 publications

References 32 publications

A 200 W broadband high power amplifier using hybrid power combining network and digital level control

A 200 W broadband high power amplifier using hybrid power combining network and digital level control

A high efficiency dual‐band outphasing power amplifier design

Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters

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