Wireless sensing in hostile environments

Cunha, M. Pereira da

doi:10.1109/ultsym.2013.0342

Cited by 33 publications

(13 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, 4-inches LGS wafers of different orientations are commercially available and reliable high-temperature elastic constants of LGS have been recently published, allowing the prediction of the frequencytemperature law of a given LGS-based SAW device in a large temperature range [5]. Still, the upper temperature range of wireless interrogation of LGS-based SAW devices is 600-700°C [6][7] because the electrical resistivity of this material drops in the range of 10 5 Ω.cm at 700°C [8]. In this context, the most promising candidate to achieve wireless SAW sensors able to operate above 700°C is AlN/sapphire bilayer structure, which shows an electrical resistivity five orders of magnitude higher than that of LGS [9], and could be possibly used up to 900°C in the air [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices

Bartoli

Aubert

Moutaouekkil

et al. 2018

Sensors and Actuators A: Physical

View full text Add to dashboard Cite

Surface acoustic waves (SAW) technology is very promising to achieve wireless sensors able to operate in high temperature environments up to possibly 1000°C. However, there is currently a bottleneck related to the packaging of such sensors. The current high-temperature packaging solutions can withstand 600°C at most. This limitation could be overtaken by the development of packageless devices, based on the waveguiding layer acoustic waves (WLAW) principle. In such devices, the acoustic wave is confined inside an inner layer and is then isolated from undesired surface perturbations like dust deposition. In this paper, we investigate the performance of an AlN/IDT/GaN/Sapphire WLAW device used as a temperature sensor able to operate up to 500°C. After validating a room-temperature GaN material constant set with basic SAW measurements performed on IDT/GaN/Sapphire structure, the AlN/IDT/GaN/Sapphire device is simulated to determine the optimal relative thicknesses of AlN and GaN films in order to obtain a good wave confinement. Based on these calculations, an experimental WLAW device is performed and electrically characterized. The full wave confinement is experimentally confirmed by the lamination of an acoustic absorber on top of the device: no change in the scattering parameters was observed. The WLAW device is then electrically characterized between the ambient temperature and 500°C. A temperature coefficient of frequency (TCF) value of-34.6 ppm/°C is obtained, demonstrating the potential of the WLAW AlN/IDT/GaN/Sapphire structure as a packageless temperature sensor. Finally, the theoretical TCF of the AlN/IDT/GaN/Sapphire structure was numerically calculated by changing the material constants of AlN, GaN and Sapphire according to the temperature coefficients available in the literature. The theoretical and experimental data were found in good accordance.

show abstract

Section: Introductionmentioning

confidence: 99%

AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices

Bartoli

Aubert

Moutaouekkil

et al. 2018

Sensors and Actuators A: Physical

View full text Add to dashboard Cite

show abstract

“…Indeed, SAW sensors are passive devices, and just re-radiate a small part of the energy received from the RF interrogation signal [1,2]. Wireless SAW sensors capable of measuring temperatures up to 600-700°C already exist [3][4][5] and are based on langasite crystals (La 3 Ga 5 SiO 14 , often called LGS). The surface of these crystals shows an outstanding stability at high temperatures up to 1000°C in air atmosphere [6].…”

mentioning

confidence: 99%

Stoichiometric Lithium Niobate Crystals: Towards Identifiable Wireless Surface Acoustic Wave Sensors Operable up to 600 °C

et al. 2019

View full text Add to dashboard Cite

Wireless surface acoustic wave (SAW) sensors constitute a promising solution to some unsolved industrial sensing issues taking place at high temperatures. Currently, this technology enables wireless measurements up to 600-700°C at best. However, the applicability of such sensors remains incomplete since they do not allow identification above 400°C. The latter would require the use of a piezoelectric substrate providing a large electromechanical coupling coefficient K 2 , while being stable at high temperature. In this letter, we investigate the potentiality of stoichiometric lithium niobate (sLN) crystals for such purpose. Raman spectroscopy and X-ray diffraction attest that sLN crystals withstand high temperatures up to 800°C, at least for several days. In situ measurements of sLN-based SAW resonators conducted up to 600°C show that the K 2 of these crystals remains high and stable throughout the whole experiment, which is very promising for the future achievement of identifiable wireless high-temperature SAW sensors.

show abstract

“…Indeed, langasite crystals are exceptionally stable at high temperatures, showing no phase transition up to their melting temperature at 1470 • C [10]. This outstanding property allowed the achievement of wireless SAW resonators able to be operated at 330 MHz up to 750 • C for a few hours [11]. Higher levels of performances are limited by several factors.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications

Bartoli

Streque

Ghanbaja

et al. 2020

Sensors

View full text Add to dashboard Cite

Scandium aluminum nitride (ScxAl1-xN) films are currently intensively studied for surface acoustic waves (SAW) filters and sensors applications, because of the excellent tradeoff they present between high SAW velocity, large piezoelectric properties and wide bandgap for the intermediate compositions with an Sc content between 10 and 20%. In this paper, the growth of Sc0.09Al0.91N and Sc0.18Al0.82N films on sapphire substrates by sputtering method is investigated. The plasma parameters were optimized, according to the film composition, in order to obtain highly-oriented films. X-ray diffraction rocking-curve measurements show a full width at half maximum below 1.5°. Moreover, high-resolution transmission electron microscopy investigations reveal the epitaxial nature of the growth. Electrical characterizations of the Sc0.09Al0.91N/sapphire-based SAW devices show three identified modes. Numerical investigations demonstrate that the intermediate compositions between 10 and 20% of scandium allow for the achievement of SAW devices with an electromechanical coupling coefficient up to 2%, provided the film is combined with electrodes constituted by a metal with a high density.

show abstract

Wireless sensing in hostile environments

Cited by 33 publications

References 51 publications

AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices

AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices

Stoichiometric Lithium Niobate Crystals: Towards Identifiable Wireless Surface Acoustic Wave Sensors Operable up to 600 °C

Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications

Contact Info

Product

Resources

About