X-band monolithic transmit-receive switch based on a stub directional coupler

Abstract

A new circuit realization of X-band transmit-receive switch is proposed that is based on a PHEMTcontrolled stub directional coupler. The operation of the switch is analyzed. The impedances of the stubs are optimized to yield a considerably larger bandwidth of the switch. It is shown that the circuit can serve as a building block for multithrow switches.

Wide gap semiconductor microwave devices

“…The electrons trapping in and escaping from QWs have a remarkable influence on all the generationrecombination processes taking place in such devices. A change in the physical principles of the operation is also opening prospects for the fabrication of new high-frequency (HF) devices [32][33][34][35][67][68][69][70][71][72][73][74][75][76]. Experimental investigations and numerical simulations related to the charge transport properties of SiC heterostructures with QWs were not fundamentally considered before [67,68].…”

“…It is assumed that the level of the injection of charge carriers is rather low and the re-distribution of the electric field between QWs can be neglected. The electron capture by QW is usually associated with the process of emission of optical phonons and is characterized by a typical time of the order of ∼1 ps [70][71][72][73][74][75][76]. The drift time…”