X-ray absorption and Raman characterizations of TeO2–Ga2O3 glasses

Charton, P.; Armand, P.

doi:10.1016/j.jnoncrysol.2003.10.008

Cited by 46 publications

(34 citation statements)

References 40 publications

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“…In principle, the fraction of Ga present as GaO 6 could be estimated from the absorption edge shifts, taking into account that the absorption edge shifts 2 eV in gallium oxides when passing from tetrahedral to octahedral coordination. 45 However, our experimental accuracy of about 1 eV does not allow us to report a convincing fraction from our measurements. In brief, no differences are observed between the spectra taken on the junction and on the wire, suggesting that a major β-Ga 2 O 3 phase with α-Ga 2 O 3 incorporated in a minor degree dominated all over the multiwire architecture.…”

mentioning

confidence: 71%

“…A negative shift is well-known to occur with decreasing coordination, and indeed it has been assumed to be an excellent indicator of Ga coordination in the structure. 45 Figure 5b shows similar XANES spectra acquired inside and outside the nanowire junction. Both spectra show low energy shoulders on the rising limb of the edge that might be explained by contributions from β-Ga 2 O 3 and a fairly strong and sharp peak similar to that of α-Ga 2 O 3 , which contains octahedral Ga sites.…”

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confidence: 89%

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Crossed Ga₂O₃/SnO₂ Multiwire Architecture: A Local Structure Study with Nanometer Resolution

et al. 2014

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Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local structure in crossing points in metal oxide nanowires. Thus, if intentionally grown crossed nanowires are well-patterned, an ideal model to study the junction is formed. By combining electron and synchrotron beam nanoprobes, we show here experimental evidence of the role of impurities in the coupling formation, structural modifications, and atomic site configuration based on crossed Ga 2 O 3 / SnO 2 nanowires. Our experiment opens new avenues for further local structure studies with both nanometer resolution and elemental sensitivity.

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confidence: 71%

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confidence: 89%

Crossed Ga₂O₃/SnO₂ Multiwire Architecture: A Local Structure Study with Nanometer Resolution

et al. 2014

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“…Different gallium coordination sites can be distinguished using Ga K-edge XANES by comparison of the spectra with those from materials containing Ga 3+ in well-defined structural sites. [15,28,29] Here we chose reference materials with a range of gallium coordination environments: quartz -GaPO 4 contains tetrahedrally coordinated gallium, [14] -Ga 2 O 3 an equal mixture of tetrahedral and octahedral gallium, [28] and Ga(acac) 3 and Ga 2 (SO 4 ) 3 octahedral gallium. [28,30] Figure 4 shows that for the octahedrally coordinated gallium a broad feature at ~10377 eV is observed, whilst for the tetrahedrally coordinated gallium a sharper peak is seen at slightly lower energy (10375.8 eV) together with a broader feature at higher energy (10384.5 eV).…”

Section: Ftir Spectroscopymentioning

confidence: 99%

Preparation, structural characterisation and antibacterial properties of Ga-doped sol–gel phosphate-based glass

et al. 2009

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A sol-gel preparation of Ga-doped phosphate-based glass with potential application in antimicrobial devices has been developed. Samples of composition (CaO) 0.30 (Na 2 O) 0.20-x (Ga 2 O 3 ) x (P 2 O 5 ) 0.50 where x = 0 and 0.03 were prepared, and the structure and properties of the gallium-doped sample compared with those of the sample containing no gallium. Analysis of the 31 P MAS NMR data demonstrated that addition of gallium to the sol-gel reaction increases the connectivity of the phosphate network at the expense of hydroxyl groups. This premise is supported by the results of the elemental analysis which showed that the gallium-free sample contains significantly more hydrogen and by FTIR spectroscopy, which revealed a higher concentration of OH groups in that sample. Ga K-edge EXAFS and XANES data revealed that the gallium ions are coordinated by six oxygen atoms. In agreement with the X-ray absorption data, the high-energy XRD results also suggest that the Ga 3+ ions are octahedrally coordinated with respect to oxygen. Antimicrobial studies demonstrated that the sample containing Ga 3+ ions had significant activity againstStaphylococcus aureus compared to the control.

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“…While, the band at 668 cm -1 is assigned to asymmetric vibrations of the network generated by TeO 4 triagonal bypyramid (tbp) groups, which were linked through Te-OTe, with O occupies alternative axial and equatorial positions [19]. The band around 744 cm -1 arises from the stretching vibrations of TeO 3 and TeO 3+1 triagonal pyramids [20,21]. The peak position around 980 cm -1 can be attributed to the vibrations of pentaborate and tetraborate groups [22].…”

Section: Vibrational Modes Of the Glasses: Ftir And Micro-raman Analysismentioning

confidence: 99%

“…Real ( ) and imaginary ( ) parts of impedance are given by (18) and (19) where is the phase angle and is given by (20) Complex impedance data of all the TPBKZFEr glasses are presented in Fig. 12 as Cole-Cole plots and from which it is possible to derive the values of , and known as Cole-Cole parameters.…”

Section: Impedance Studiesmentioning

confidence: 99%

NIR emission studies and dielectric properties of Er3+-doped multicomponent tellurite glasses

Sajna

Thomas

Jayakrishnan

et al. 2016

Spectrochimica Acta Part A: Molecular and Biomolecular Spectros

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Multicomponent tellurite glasses containing altered concentrations of Er 2 O 3 (ranging from 0 to 1 mol%) were prepared by the standard melt quenching technique. Investigations through energy dispersive X-ray spectroscopy (EDS), Raman scattering spectroscopy, FTIR spectroscopy, NIR emission studies and dielectric measurement techniques were done to probe their compositional, structural, spectroscopic and dielectric behaviour. The influence of erbium ion concentration on the infrared emission (~1.53 m) of these glasses and their respective lifetimes were measured. From the measured capacitance and dissipation factor, the relative permittivity, dielectric loss and the conductivity were computed; which furnish the dielectric nature of the multicomponent tellurite glasses that depend on the frequency of the applied LCR meter. Assuming the ideal Debye behaviour as substantiated by Cole-Cole plot, an examination of the real and imaginary parts of impedance is performed. The power-law and Cole-Cole parameters were resolved for all the glass samples. From the assessment of the NIR emission analysis and dielectric properties of the glass samples, it is manifested that the Er 3+ ion concentration has played a vital role in tuning the optical and dielectric properties and the 0.5 mol% Er 3+-doped glass is confirmed as the finest composition.

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X-ray absorption and Raman characterizations of TeO2–Ga2O3 glasses

Cited by 46 publications

References 40 publications

Crossed Ga₂O₃/SnO₂ Multiwire Architecture: A Local Structure Study with Nanometer Resolution

Crossed Ga₂O₃/SnO₂ Multiwire Architecture: A Local Structure Study with Nanometer Resolution

Preparation, structural characterisation and antibacterial properties of Ga-doped sol–gel phosphate-based glass

NIR emission studies and dielectric properties of Er3+-doped multicomponent tellurite glasses

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X-ray absorption and Raman characterizations of TeO2–Ga2O3 glasses

Cited by 46 publications

References 40 publications

Crossed Ga2O3/SnO2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution

Crossed Ga2O3/SnO2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution

Preparation, structural characterisation and antibacterial properties of Ga-doped sol–gel phosphate-based glass

NIR emission studies and dielectric properties of Er3+-doped multicomponent tellurite glasses

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Product

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Crossed Ga₂O₃/SnO₂ Multiwire Architecture: A Local Structure Study with Nanometer Resolution

Crossed Ga₂O₃/SnO₂ Multiwire Architecture: A Local Structure Study with Nanometer Resolution