X-ray, XTEM and RBS analysis of recrystallized ion beam amorphized CVD Si

Range profiles of 50and 100-keV Si+ ions implanted into Si(100) at room temperature with doses from 2 X 10'6 to 1 X 10' ions cm, and of 2 X 10' 50-keV Si+ ions cm in Si(100) preimplanted with 50-keV Si+ ions with doses from 5 X 10' to 1 X 10' ions cm, have been studied with nuclear reaction techniques. The structural transformation of the samples was studied by Rutherford backscattering and channeling. The dependence of the range profile on the damage structure of the sample has been examined by comparing measured range profiles with those obtained in molecular-dynamics simulations. The dependence of the range profile on the polycrystalline sample structure is shown.

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Range profiles in self-ion-implanted crystalline Si

Nordlund

Keinonen

Raühala

et al. 1995

Phys. Rev. B

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Defect production in collision cascades in elemental semiconductors and fcc metals

et al. 1998

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A comparative molecular dynamics simulation study of collision cascades in two elemental semiconductors and five fcc metals is performed to elucidate how different material characteristics affect primary defect production during ion irradiation. By using simulations of full 400 eV-10 keV collision cascades and contrasting the results on different materials with each other, we probe the effect of the mass, melting temperature, material strength, and crystal structure on the modification of the material due to the cascade. The results show that the crystal structure has a strong effect on many aspects of damage production, while other material characteristics are of lesser overall importance. In all materials studied, isolated point defects produced by the cascade are predominantly interstitials. In semiconductors, amorphous clusters are produced in the cascade core, whereas in metals most of the crystal regenerates, leaving only small vacancy-rich clusters. Large interstitial clusters found in a few events in the heavy metals were observed to form by the isolation of a high-density liquid zone during the recrystallization phase of a cascade. ͓S0163-1829͑98͒01813-X͔

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X-ray, XTEM and RBS analysis of recrystallized ion beam amorphized CVD Si

Cited by 2 publications

References 6 publications

Range profiles in self-ion-implanted crystalline Si

Range profiles in self-ion-implanted crystalline Si

Defect production in collision cascades in elemental semiconductors and fcc metals

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